Effect of atomic hydrogen in highly lattice-mismatched molecular beam epitaxy

Chun, Yong Jin; Okada, Yoshitaka; Kawabe, Mitsuo

doi:10.1016/0022-0248(95)80261-a

Cited by 26 publications

(14 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is known that the introduction of hydrogen during deposition enhances the surface migration of adatoms, which leads to an increase in grain size [61,62]. Current-potential curves for Pt/AGSe prepared with and without hydrogen are shown in Figure 10.…”

Section: Effects Of Cds Modification and Agse Film Preparation Under mentioning

confidence: 99%

Chalcopyrite Thin Film Materials for Photoelectrochemical Hydrogen Evolution from Water under Sunlight

2015

View full text Add to dashboard Cite

Abstract:Copper chalcopyrite is a promising candidate for a photocathode material for photoelectrochemical (PEC) water splitting because of its high half-cell solar-to-hydrogen conversion efficiency (HC-STH), relatively simple and low-cost preparation process, and chemical stability. This paper reviews recent advances in copper chalcopyrite photocathodes. The PEC properties of copper chalcopyrite photocathodes have improved fairly rapidly: HC-STH values of 0.25% and 8.5% in 2012 and 2015, respectively. On the other hand, the onset potential remains insufficient, owing to the shallow valence band maximum mainly consisting of Cu 3d orbitals. In order to improve the onset potential, we explored substituting Cu for Ag and investigate the PEC properties of silver gallium selenide (AGSe) thin film photocathodes for varying compositions, film growth atmospheres, and surfaces. The modified AGSe photocathodes showed a higher onset potential than copper chalcopyrite photocathodes. It was demonstrated that element substitution of copper chalcopyrite can help to achieve more efficient PEC water splitting.

show abstract

Section: Effects Of Cds Modification and Agse Film Preparation Under mentioning

confidence: 99%

Chalcopyrite Thin Film Materials for Photoelectrochemical Hydrogen Evolution from Water under Sunlight

2015

View full text Add to dashboard Cite

show abstract

“…similarly, as described regarding the MBE of InAs/GaAs and GaAs/InP [8] as well as the HWE of MuSb/GaAs with the supply of H- [9]. H-always cover the top surface of the epilayer as metallic hydrides via surface segregation, and act as surfactants which limit the movement of adatoms on the growing surface, resulting in a suppression of 3D island growth of MnAs.…”

Section: Ill Results Anti Discusionmentioning

confidence: 99%

“…MnAs layers were grown under following conditions: aMn BEPwas fixed at about 8. Ox 10- 8 Torr on a beam-flux monitor, and the As 4 /Mn BEP ratio was kept constant at about 50. MnAs layers with thicknesses of about 600 nm were grown on (001) substrates with a growth rate of about 300 run/h, while Ts was kept constant at about 250 "C, as measured by an infrared pyrometer.…”

Section: H Experimentalmentioning

confidence: 99%

“…In the MBE growth of lattice-mismatched systems, it is well known that surfactants can suppress three-dmensional (3D) island growth and enhance two-dmensional (2D) layer-by-Iayer growth even when the film thickness exceeds the critical layer thickness [7,8]; Copel et al have first reported the surfactant effect using As in aGe/Si heterostructures [7]. Chun et al have used atomic hydrogen (He) in the InAs/GaAsandGaAs/lnPheterostructures [8].…”

Section: Introductionmentioning

confidence: 99%

“…Chun et al have used atomic hydrogen (He) in the InAs/GaAsandGaAs/lnPheterostructures [8]. We have alsousedH-inthe hot-wall epitaxy (HWE)ofMnSb on GaAs, and shown that the'irradation of H-improves the swface smoothness [9].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Atomic Hydrogen on Molecular-Beam Epitaxy of MnAs/GaAs Heterostructures

et al. 1998

View full text Add to dashboard Cite

Abstract-MnAs epilayers were grown on GaAs (001) substrates by molecular-beam epitaxy with the supply of atomic hydrogen (He). X-ray diffraction and reflection high-energy electron diffraction characterizations revealed that the growth directions were along the (1100] direction for the epilayer grown with He, and along both the (1100] and (1101] directions for the epilayers grown with/without hydrogen molecules (Bz). Atomic force microscope observations showed that the faceted mounds elongated along the GaAs [110] direction were only observed for the epilayer grown with He, although large three-dimentional islands were observed on the elongations along the GaAs [110] direction for the epilayers grown with/without the supply of Bz. The results indicate that the irradiation of He enhances the growth of MnAs epilayers along the single direction and improves the surface smoothness.

show abstract

Selective growth and other applications of hydrogen-assisted molecular beam epitaxy

Kawabe

1995

Journal of Crystal Growth

View full text Add to dashboard Cite

Effect of atomic hydrogen in highly lattice-mismatched molecular beam epitaxy

Cited by 26 publications

References 12 publications

Chalcopyrite Thin Film Materials for Photoelectrochemical Hydrogen Evolution from Water under Sunlight

Chalcopyrite Thin Film Materials for Photoelectrochemical Hydrogen Evolution from Water under Sunlight

Effect of Atomic Hydrogen on Molecular-Beam Epitaxy of MnAs/GaAs Heterostructures

Selective growth and other applications of hydrogen-assisted molecular beam epitaxy

Contact Info

Product

Resources

About