Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors

Abstract

The effects of antimony (Sb) doping on solution‐processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb‐doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high ION/OFF ratio of 4.6 cm2/V s, 0.29 V/decade, 1.9 V, and 3 × 107, respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen‐related defects and/or the existence of the lone‐pair s‐electron of Sb3+ in amorphous InSbO films. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors

“…The derived mobility values are 14 cm 2 /(Vs) for V DS1 = 10 V and 28 cm 2 /(Vs) for V DS2 = 20 V. These values of the mobility are an upper limit because we used the dielectric constant for f = 1 kHz. The electrical parameters of the TFTs are comparable to recently achieved parameters based on solution-processed indium oxide TFTs. − (Further details given in Table S1 in the SI. )…”

Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory

“…It is reasonable that solution processed MO systems contain residual hydroxyl groups due to incomplete dehydration and condensation to a dense M–O–M framework. These can provide an additional source of localized states influencing bias stress response . To investigate IBO TFT bias stress stability, these devices were subjected to a V G - V DS constant bias of +20 V for 600 s intervals for 3600 s in ambient, without intentional light blocking.…”

“…Indium oxide (In 2 O 3 ) is among the most heavily investigated MOs, having a band gap larger than 3.1 eV, high intrinsic carrier concentration ( N = 10 17 –10 21 cm –3 ), and large electron field effect mobility (μ ≈ 10–50 cm 2 V –1 s –1 ), thereby offering an effective MO host matrix for several classes of high-performance MO-based TFTs. , Nevertheless, undoped In 2 O 3 films are often polycrystalline and the oxygen vacancies governing the carrier concentration are challenging to control, frequently affording In 2 O 3 TFTs with less than optimal current modulation (low I on / I off ratios), poor bias stress stability, unacceptable threshold voltages, and poor uniformity. , Thus, In 2 O 3 TFT performance reported by several groups using the same TFT architecture/dielectric (SiO 2 ) and growth conditions can differ significantly, with μ varying >10x! − …”

“…These can provide an additional source of localized states influencing bias stress response. 9 To investigate IBO TFT bias stress stability, these devices were subjected to a V G -V DS constant bias of +20 V for 600 s intervals for 3600 s in ambient, without intentional light blocking. The resulting TFT transfer plots shown in Figure S5 (Supporting Information) and bias stress induced V T shifts with increasing bias time are plotted in Figure 2d.…”

Preparation of ternary (35 – x)Sb2O3–xBi2O3–65P2O5 glasses for lead-free glass application

“…To improve chemical durability of phosphate glasses, antimony trioxide is usually chosen to modify the glass structure and decrease the T g . The electron lone pair in the Sb 3+ -ion makes it possible [6].…”