2018
DOI: 10.1016/j.cplett.2018.06.063
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Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

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Cited by 37 publications
(10 citation statements)
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“…It is often used as the main insulation material for cable accessories. TiO 2 is widely used because of its simple preparation process, convenient operation and good stability [24,25]. The rutile nano-TiO 2 (purity ≥ 99%, average particle size 35 nm) produced by Beijing Dekedaojin Technology Co., Ltd. was used as a modified filler to prepare nano-TiO 2 /LSR composite samples.…”
Section: Methodsmentioning
confidence: 99%
“…It is often used as the main insulation material for cable accessories. TiO 2 is widely used because of its simple preparation process, convenient operation and good stability [24,25]. The rutile nano-TiO 2 (purity ≥ 99%, average particle size 35 nm) produced by Beijing Dekedaojin Technology Co., Ltd. was used as a modified filler to prepare nano-TiO 2 /LSR composite samples.…”
Section: Methodsmentioning
confidence: 99%
“…9 Resistive random access memory (ReRAM) has been considered the most promising nextgeneration nonvolatile memory. 15 Our work first demonstrates that a spectrum of colors of passive films on Ti foil can be achieved by regulating the sputtering time while maintaining other experimental conditions. As shown in Figure 1, with the increasing of sputtering time, the color of the passive ZnO layers can be gradually diversified: brown → light yellow → purplish blue → orange → blue → pink.…”
Section: ■ Introductionmentioning
confidence: 90%
“…Additionally, the resistive switching performance has been broadly reported, and understanding the switching mechanism can help develop the stability and scalability of devices . Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory …”
Section: Introductionmentioning
confidence: 99%
“…This development has attracted widespread attention in the industry and academia, and many new investigations of resistive memory have been initiated by researchers [13,14]. The RS effect of the insulator layer has been discovered in various kinds of amorphous metal oxides, such as ZnO, HfO 2 , TiO 2 , MgO, Al 2 O 3 , and Y 2 O 3 [15][16][17][18][19]; and in amorphous perovskite and layered perovskite oxides such as YCrO 3 , Pr 0.67 Sr 0.33 MnO 3 , Bi 3.15 Bd 0.85 Ti 3 O 12 , SrTiO 3 and Nb-doped SrTiO 3 [20][21][22][23][24][25][26], etc. Among these, the amorphous strontium titanate-based memory structure uses the following electrodes: Pt, Ti, and indium tin oxide (ITO) [23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%