Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Yu, Yanmei; Yang, Feng; Mao, Shuangsuo; Zhu, Shouhui; Jia, Yongfang; Yuan, Ling; Salmen, Mayameen; Sun, Bai

doi:10.1016/j.cplett.2018.06.063

Cited by 37 publications

(10 citation statements)

References 46 publications

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“…It is often used as the main insulation material for cable accessories. TiO 2 is widely used because of its simple preparation process, convenient operation and good stability [24,25]. The rutile nano-TiO 2 (purity ≥ 99%, average particle size 35 nm) produced by Beijing Dekedaojin Technology Co., Ltd. was used as a modified filler to prepare nano-TiO 2 /LSR composite samples.…”

Section: Methodsmentioning

confidence: 99%

Dielectric and space charge characteristics of nano-modified liquid silicone rubber for high-voltage DC cable accessories

Chen

Zhang

et al. 2020

J Mater Sci: Mater Electron

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In order to solve the problem of space charge accumulation in high-voltage DC cable accessories, nanometer titanium dioxide (TiO 2) doping method is used to improve the space charge performance of liquid silicone rubber (LSR). Conductivity, dielectric spectrum and DC breakdown field strength, space charge distribution, and the trap level distribution of nano-TiO 2 / LSR composite samples were tested in this paper. With the increase of the doping concentration of nanoparticles, the DC conductivity increased, and the DC breakdown field strength decreased. The ε r of the TiO 2 /LSR composite sample increased with the increase in the doping concentration of nano-TiO 2. As the frequency increased, tanδ decreased first in the lowfrequency region and then increased in the high frequency. When the electric field strength increases from 10 to 20 kV/mm, the same polarity charges appear near the upper and lower electrodes of the sample, and the space charge accumulation doubled. After the addition of nano-TiO 2 , under the two electric field strengths, the space charge accumulation of 4 wt%-TiO 2 / LSR composite materials decreased by 24.55 nc and 81.03 nc, respectively. The trap energy level of the 4 wt% nano-TiO 2 composites becomes smaller, and shallow traps are introduced, it was verified that the addition of 4 wt% nano-TiO 2 particles reduced the space charge inside the composite sample and achieved the effect of suppressing space charge.

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Section: Methodsmentioning

confidence: 99%

Dielectric and space charge characteristics of nano-modified liquid silicone rubber for high-voltage DC cable accessories

Chen

Zhang

et al. 2020

J Mater Sci: Mater Electron

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“…9 Resistive random access memory (ReRAM) has been considered the most promising nextgeneration nonvolatile memory. 15 Our work first demonstrates that a spectrum of colors of passive films on Ti foil can be achieved by regulating the sputtering time while maintaining other experimental conditions. As shown in Figure 1, with the increasing of sputtering time, the color of the passive ZnO layers can be gradually diversified: brown → light yellow → purplish blue → orange → blue → pink.…”

Section: ■ Introductionmentioning

confidence: 90%

“…Additionally, the resistive switching performance has been broadly reported, and understanding the switching mechanism can help develop the stability and scalability of devices . Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory …”

Section: Introductionmentioning

confidence: 99%

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS₂/ZnO Heterojunction Devices

Kadhim

Yang

Sun

et al. 2019

ACS Appl. Electron. Mater.

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A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple operating system. In this work, the wide spectrum with self-colored ZnO layers on the Ti foil is obtained by varying the sputtering time, and the colors of these ZnO films can be tuned by a MoS 2 layer covering. Further, an existence of resistive switching (RS) memory and negative differential resistance (NDR) state in MoS 2 /ZnO heterojunction devices was demonstrated, in which the bright yellow Ag/MoS 2 /ZnO/Ti device shows the best performance with long time endurance. This work opens up an opportunity for exploration of the multifunctional components in future electronic applications.

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“…This development has attracted widespread attention in the industry and academia, and many new investigations of resistive memory have been initiated by researchers [13,14]. The RS effect of the insulator layer has been discovered in various kinds of amorphous metal oxides, such as ZnO, HfO 2 , TiO 2 , MgO, Al 2 O 3 , and Y 2 O 3 [15][16][17][18][19]; and in amorphous perovskite and layered perovskite oxides such as YCrO 3 , Pr 0.67 Sr 0.33 MnO 3 , Bi 3.15 Bd 0.85 Ti 3 O 12 , SrTiO 3 and Nb-doped SrTiO 3 [20][21][22][23][24][25][26], etc. Among these, the amorphous strontium titanate-based memory structure uses the following electrodes: Pt, Ti, and indium tin oxide (ITO) [23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

Tang

Jiang

et al. 2019

Journal of Asian Ceramic Societies

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Amorphous SrTiO 3 thin films grown on fluorine-doped tin oxide (FTO) glass were fabricated via the sol-gel route and coating process. The composition and chemical state of the thin films were studied by X-ray photoelectron spectroscopy. A high switching ratio and good endurance were demonstrated in the Au/amorphous SrTiO 3 /FTO/glass memory cells, with an ability to achieve a ratio of high and low resistance (R off /R on) of 10 2. A stable switching voltage and uniform resistance states could be identified, moreover, using standard Weibull distribution. The results showed that Ohmic and space charge limited conduction mechanisms coexisted in the amorphous SrTiO 3 thin films. Ohmic conduction dominated in the initial high-and low-resistance state, but the space charge limited conduction mechanism was dominant in the later high-resistance field. The resistance switching effect in the device was explained by the formation and rupture of oxygen vacancies interrelated with filaments. These amorphous SrTiO 3 films have potential resistive memory applications.

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Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Cited by 37 publications

References 46 publications

Dielectric and space charge characteristics of nano-modified liquid silicone rubber for high-voltage DC cable accessories

Dielectric and space charge characteristics of nano-modified liquid silicone rubber for high-voltage DC cable accessories

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS₂/ZnO Heterojunction Devices

Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process

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Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Cited by 37 publications

References 46 publications

Dielectric and space charge characteristics of nano-modified liquid silicone rubber for high-voltage DC cable accessories

Dielectric and space charge characteristics of nano-modified liquid silicone rubber for high-voltage DC cable accessories

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices

Bipolar resistive switching characteristics of amorphous SrTiO3thin films prepared by the sol-gel process

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Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS₂/ZnO Heterojunction Devices

Bipolar resistive switching characteristics of amorphous SrTiO₃thin films prepared by the sol-gel process