Effect of annealing treatment on the uniformity of CeO 2 /TiO 2 bilayer resistive switching memory devices

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

“…Accordingly, the formation of TiO interfacial layer can be associated with the RS effect in bilayer ZnO/CeO 2−x and CeO 2−x /ZnO heterostructures. It is well known that Ti is highly reactive metal with atmospheric oxygen: therefore, it can easily form TiO layer at Ti/oxide interface [ 35 ]. In Ti/ZnO/CeO 2−x /Pt heterostructure memory device, ZnO is n-type semiconductor and contains a lot of oxygen vacancies in it, so an Ohmic contact is formed at Ti/ZnO interface [ 36 ].…”

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

“…Yang et al [21] reported that memory devices after rapid thermal annealing demonstrated remarkable improvement in switching characteristics as compared to as-fabricated devices. In our previous study, we reported that crystal structure of CeO 2 film is influenced by oxygen annealing treatment, and an amount of oxygen vacancies in the bilayer structures CeO 2 /TiO 2 and ZnO/CeO 2 films can improve the switching parameters [22,23]. Jin et al [24] found significant improvement in bipolar resistive switching characteristics after annealing at 300°C in nitrogen atmosphere.…”

A mechanical and modelling study of magnetron sputtered cerium-titanium oxide film coatings on Si (100)

“…Cerium and titanium MMOs are not traditionally used as materials to fabricate hard coatings as metal nitride coatings have been preferred due to their superior tribological properties [10][11][12][13]. Previous research of these MMOs have primarily focused on its optical, catalytic and electrical properties [14][15][16][17][18]. The mechanical characteristics and thermal stability of magnetron sputtered cerium oxides (CeO 2 ) and titanium oxide (TiO 2 ) MMOs are not well understood.…”