Effect of annealing time on memristive behavior of sol-gel spincoated ZnO-based memristive device

Shaari, Nor Azira Akma; Sauki, Nur Sa’adah Muhamad; Herman, Sukreen Hana

doi:10.1063/1.4965105

Cited by 4 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The method employed to fabricate a device will affect its RS properties [ 100 , 101 , 102 ], with the same material potentially demonstrating different RS behavior when synthesized using different approaches [ 103 , 104 ]. Thus, various factors such as industrial practicality, cost-effectiveness, and RS performance need to be considered when fabricating an RS device.…”

Section: Fabrication Techniques For Resistive Switching Devicesmentioning

confidence: 99%

“…Electrochemical approaches can also be used to fabricate the entire metal–insulator–metal device, while template-assisted deposition and nanostructured devices can be achieved with electrochemical synthesis. Some reports have also suggested that electrochemically synthesized devices have superior properties compared with sol–gel and spin-coated devices [ 103 , 104 ]. The advantages and disadvantages of the synthesis methods are summarized in Table 2 [ 116 , 117 , 118 , 119 , 120 ].…”

Section: Fabrication Techniques For Resistive Switching Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

et al. 2023

View full text Add to dashboard Cite

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

show abstract

Section: Fabrication Techniques For Resistive Switching Devicesmentioning

confidence: 99%

Section: Fabrication Techniques For Resistive Switching Devicesmentioning

confidence: 99%

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

et al. 2023

View full text Add to dashboard Cite

show abstract

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

View full text Add to dashboard Cite

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

show abstract

Influence of two gradual steps of vacuum annealing on structural and opto-electronic characteristics of Nb-doped TiO2 transparent conducting oxide

Fallah

Zamani-Meymian

Rabbani

2018

Superlattices and Microstructures

View full text Add to dashboard Cite

Effect of annealing time on memristive behavior of sol-gel spincoated ZnO-based memristive device

Cited by 4 publications

References 10 publications

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Influence of two gradual steps of vacuum annealing on structural and opto-electronic characteristics of Nb-doped TiO2 transparent conducting oxide

Contact Info

Product

Resources

About