Effect of Annealing Temperature on Morphology and Optoelectronics Properties of Spin-Coated CZTS Thin Films

Özdal, Teoman; Chtouki, T.; Kavak, Hamide; Figà, Viviana; Guichaoua, D.; Erguig, H.; Myśliwiec, Jarosław; Sahraoui, B.

doi:10.1007/s10904-020-01646-y

Cited by 24 publications

(11 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, ε significantly decreases as the annealing temperature is increased. This indicates that annealing temperature greatly influences controlling D and the related fundamental crystal properties, according to previously reported results [39,45]. The structural distortions and defects are reduced, as indicated by the decrease in the microstrain and the enhancement of the crystallite size.…”

Section: Structural and Electronic Propertiessupporting

confidence: 84%

Computational and experimental characterizations of annealed Cu2ZnSnS4 thin films

Migdadi

Alsaad

Qattan

et al. 2022

Heliyon

View full text Add to dashboard Cite

We report on the synthesis and characterization of Cu 2 ZnSnS 4 (CZTS) thin films prepared at different annealing temperatures using the sol-gel method and deposited on glass substrates using the immersing method. The XRD analysis demonstrates that the films annealed at 450 C exhibit the most stable tetrahedral kesterite structure. Computationally, the Vienna ab initio simulation package (VASP) has been implemented to calculate critical structural properties of as-prepared CZTS) thin films and compared with those extracted from the XRD patterns. An excellent agreement is obtained between the calculated and measured structural parameters. Optical measurement of key optical parameters of annealed CZTS thin films shows a drastic manipulation of all-optical properties compared to the as-prepared thin films. In particular, an optical band gap of 1.62 eV obtained for annealed CZTS thin films at 450 C makes them eligible to be potential candidates for thin film-based high-efficiency solar cells. Calculations of elastic properties of annealed thin films reveal that crystallite size increases and microstrain decrease compared with those of as-prepared thin films. The sheet resistance of annealed CZTS thin films exhibits a significant decline as the annealing temperature is increased. The electrical properties of annealed CZTS thin films could match some conductors. Remarkably, at 450 C annealing temperature, the sheet resistance decreases to 74 Ω.cm À1 indicating the possibility of using the annealed CZTS thin films for efficient and low cost solar cell applications.

show abstract

Section: Structural and Electronic Propertiessupporting

confidence: 84%

Computational and experimental characterizations of annealed Cu2ZnSnS4 thin films

Migdadi

Alsaad

Qattan

et al. 2022

Heliyon

View full text Add to dashboard Cite

show abstract

“…The small difference is probably due to chemical processing. The morphologies discussed above are the standard ones as they are common in the literature [34][35][36]. Table 4 provides the surface roughness parameters calculated from the AFM data.…”

Section: Resultsmentioning

confidence: 99%

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

et al. 2021

View full text Add to dashboard Cite

In the present study, we provide useful data related to one of the most promising materials in thin-film solar cell technologies: Cu2ZnSnS4 (CZTS) kesterite structures. Sol-gel spin coating and chemical bath deposition methods were used to fabricate and further investigate Mo/CZTS/CdS/ZnO/AZO heterostructures. In order to examine the crystal structure of the samples, Raman scattering measurements using two excitation wavelengths (514.5 nm and 785 nm) were performed. Three Raman bands related to CZTS were found, as well as one that had its origin in CdS. By using laser ablation and performing Raman spectroscopy on these modified samples, it was shown that during the manufacturing process a MoS2 interlayer was formed between the CZTS and Mo layers. Our method proved that the CZTS layer in a multilayer device structure fabricated by solution-based methods can be decomposed, and thus a detailed analysis of the layer can be performed. Subsequently, current-voltage curves were investigated in terms of the essential electrical properties of glass/Mo/p-CZTS/n-CdS/ZnO/AZO junctions and occurring current transport mechanisms. Finally, AFM data were acquired to study the surface topography of the studied samples. The images showed that these surfaces had a uniform grain structure.

show abstract

“…In light of this, Cadmium Sul de (CdS) have attracted and attention of many researchers in the scienti c and industrial led. To produce a thin layer of Cadmium Sul de (CdS), There are a variety of fabrication techniques used such as chemical bath deposition (CBD) [1,2], electrodeposition [3], chemical spray pyrolysis (CSP) [4], successive ionic layer adsorption (SILA) [5], Spin-Coated [6 ],vacuum evaporation [7], screen printing [8], ash evaporation [9], sputtering [10], molecular beam epitaxy (MBE) [11], and pulsed laser deposition (PLD) [12,13]. Among these techniques, pulsed laser deposition (PLD), which have the following advantages (I) simple and easy: where a laser beam vaporizes a target surface, resulting in a lm with the same composition as the target.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

et al. 2022

View full text Add to dashboard Cite

In this study, cadmium Sulfide (CdS) thin films were synthesized on quartz substrates using an infrared pulsed laser deposition (IR-PLD) technique under high vacuum (~10−6 Torr) conditions. X-ray diffraction was used to evaluate the structural features. According to X-ray analysis, the deposited CdS films are crystalline and have a favored orientation on a plane (110) of an orthorhombic. The peak intensity and the average crystallite size increases with increasing the film thickness. After annealing at 300 °C, the orthorhombic phase transformed into a predominant hexagonal phase and the same result was obtained by SEM photographs as well. Spectrophotometric measurements of transmittance and reflectance of the CdS films were used to derive optical constants (n, k, and absorption coefficient α). The optical band gap energy was found to be 2.44 eV. The plasma plume formation and expansion during the film deposition have also been discussed. The photocurrent response as a function of the incident photon energy E (eV) at different bias voltages for different samples of thicknesses (85, 180, 220 and 340 nm) have been studied, indicating that the photocurrent increases by increasing both the film thickness and photon energy with a peak in the vicinity of the band edge. Thus, the prepared CdS films are promising for application in optoelectronic field.

show abstract

Effect of Annealing Temperature on Morphology and Optoelectronics Properties of Spin-Coated CZTS Thin Films

Cited by 24 publications

References 38 publications

Computational and experimental characterizations of annealed Cu2ZnSnS4 thin films

Computational and experimental characterizations of annealed Cu2ZnSnS4 thin films

Structural Properties and Electrical Characteristics of p-n Junctions Based on Kesterite Cu2ZnSnS4 Layers for Thin-Film Solar Cells

Epitaxial Growth and Optical Properties of Laser Deposited CdS Thin Films

Contact Info

Product

Resources

About