Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering

Lin, Chen; Zhang, Huayu; Wang, Gui‐Gen; Yang, Fangxu; Kuang, Xu-Ping; Sun, Rui; Han, Jiecai

doi:10.1016/j.apsusc.2011.10.076

Cited by 64 publications

(27 citation statements)

References 31 publications

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“…This explanation is consistent with our observations of increased strain in these samples measured by XRD. In addition, at longer wavelengths, B diffusion-doped ZnO samples annealed at 600 °C for 16 and 24 h exhibit a broad red luminescence in the range 610-800 nm which is probably due to (O i ) defects [38][39][40][41].…”

Section: Resultsmentioning

confidence: 99%

Defect-induced room temperature ferromagnetism in B-doped ZnO

Yılmaz

Nisar

Atasoy

et al. 2013

Ceramics International

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ZnO microrods were grown on glass substrates by the spray pyrolysis method and boron was doped into the ZnO microrods by diffusion. X-ray diffraction results confirmed that the incorporation of B leads to a slight reduction in the deposit texture. Scanning electron microscopy measurements showed that the morphology of the ZnO samples changed from a microrod to nanocrystalline structure with B-doping. Photoluminescence data indicate that Bdoping leads to a relative increase of the unstructured green band intensity. Magnetic measurements revealed that B-doped ZnO samples exhibited room temperature ferromagnetism related to defects, in agreement with first principles theoretical calculations.

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Section: Resultsmentioning

confidence: 99%

Defect-induced room temperature ferromagnetism in B-doped ZnO

Yılmaz

Nisar

Atasoy

et al. 2013

Ceramics International

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“…To obtain high quality textured and more conductive AZO films for the application of optical devices, it is essential to anneal the AZO thin films. Most studies on post-annealing treatments have focused on post-annealing temperature and post-annealing ambient, whereas little attention has been paid on post-annealing time [10,11]. In this study, we systematically investigated the effect of the post-annealing time on the structural, electrical and optical properties of AZO thin films deposited by RF magnetron sputtering and analyzed the chemical state in AZO film to obtain better understanding of electrical properties.…”

Section: Introductionmentioning

confidence: 98%

Effect of post-annealing time on the properties of sputtered Al-doped ZnO thin films

Kim

2016

J Mater Sci: Mater Electron

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Al doped ZnO (AZO) thin films prepared by RF magnetron sputtering were annealed in rapid thermal annealing system under various post-annealing times. The effect of post-annealing time on the structural, optical, and electrical properties of AZO film was investigated, systematically. As the post-annealing time elongated, the electrical resistivity was improved due to an increase in the carrier concentration and the mobility. X-ray photoelectron spectroscopy showed that the long post-annealing time increased the oxygen vacancy and decreased the surface bonding caused by the O 2 absorption on surface, resulting in increase of the carrier concentration and the mobility. Therefore, the post-annealing time plays an important role in determining the nature of bonding in AZO thin films and is a powerful method to obtain better electrical properties.

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“…ZnO materials have different dimensions, such as one dimension (1D), two dimensions (2D) or three dimensions (3D). Compared with 1D ZnO (nanorod, nanowire, nanocoil, and nanoforest) [1,2] and 2D ZnO (thin film) [3][4][5][6][7], 3D ZnO structure are attracting more and more attentions due to great applications in semiconductor devices [8].…”

Section: Introductionmentioning

confidence: 99%