Abstract:Al doped ZnO (AZO) thin films prepared by RF magnetron sputtering were annealed in rapid thermal annealing system under various post-annealing times. The effect of post-annealing time on the structural, optical, and electrical properties of AZO film was investigated, systematically. As the post-annealing time elongated, the electrical resistivity was improved due to an increase in the carrier concentration and the mobility. X-ray photoelectron spectroscopy showed that the long post-annealing time increased the… Show more
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