Effect of annealing on the structural properties of electron beam deposited CIGS thin films

Effect of Annealing on the Structural and Optical Properties of CuIn<sub>1–x</sub>Al<sub>x</sub>S<sub>2</sub> thin Films

“…This noticeable shift of the main Bragg peak to large angles is due to the decrease in lattice constants "a" and "c" and therefore the "d" spacing. The shift of the diffraction peak to higher angle and the decrease of lattice parameter with increase of aluminium content in the studied compositions cherrer equation [19]: are in accordance to Vegards law [1]. These results indicate that CIAS solid solution has been successfully obtained without any phase separation into CIS or CAS or any other secondary phases.…”

“…Ternary and quaternary compound semiconductors of the type I-III-VI 2 have received much attention in recent years because of their potential application in optoelectronic devices [1]. Significant effort has been made to increase the band gap in order to improve the module performance, resulting from the trade-off between higher voltages and lower currents at maximum power.…”

Synthesis of CIS (CuInSe2) Based Materials for Solar Applications

“…It enables production of low cost flexible thin film solar cells. CIS nanostructures and thin films were in the past produced using magnetron sputtering [2], co-evaporation [3], laser deposition [4], electron beam deposition [5], and also non-vacuum based methods. It is known that processes based on vacuum technology have some disadvantages such as high energy consumption, high processing temperature, necessity of ultrapure materials, and limitation in total area of films [6].…”

Obtención de estructuras calcopirita (CIGS) y kesterita (CZTS) como absorbentes para dispositivos fotovoltaicos de capa fina mediante métodos de síntesis de bajo coste

“…Las muestras tratadas en horno RTP y tubular han sido etiquetadas con una R y una T, respectivamente. [219,220]. Por lo que su control es preciso durante el procesado.…”

“…(112), (220) y (312) hacia ángulos mayores con respecto a los ángulos detectados para la muestra pre-calentada (Figura 41). Dicho efecto está asociado a una disminución del volumen de la celda unidad (r Ga < r In ), confirmando así la inserción del Ga en la red cristalina [220]. La principal diferencia encontrada entre los resultados del resto de las muestras estudiadas referente a la reactividad del sistema (DRX) es que tanto las muestras tratados por RTP, como con el horno tubular es un aumento en la intensidad de los picos principales de la disolución sólida CIGS a medida que se incrementa la temperatura.…”