Effect of annealing on In₂S₃thin films prepared by flash evaporation

Effect of thickness on structural, optical, electrical and morphological properties of nanocrystalline CdSe thin films for optoelectronic applications

“…It is found to be varied with film thickness which may be attributed to the allowed states in the forbidden region revealed an improvement in the uniformity of the films [44]. Generally, band gap has tendency toward lower side as thickness increases owing to the optical band gap narrowness between the defect levels and the conduction band [45]. The results are in agreement with the earlier reported work [46,47].…”

Effect of heat treatment in sulfur on structural, optical and electrical properties of thermally evaporated In2S3 thin films

“…Consequently, the films contain sulfur rich at higher annealing temperatures. Bouabid et al (Bouabid et al, 2007) also observed S/In value of 1.67 for In 2 S 3 films anealed at 573 K under sulfur atmosphere.…”

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

“…No voids and inclusions are found. The surface is appeared to be regular and after annealing at 150 1C a slight roughness is also observed which indicates to the more reallignment in orientation of the deposited atoms of films [45]. Generally, the grains in the films depended on the annealing temperature, substrate temperature and film thickness.…”