Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Ahn, Ji‐Hoon; Kim, Ja-Yong

doi:10.1016/j.mee.2015.09.015

Cited by 2 publications

(3 citation statements)

References 12 publications

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“…There have been few reports on ALD SRO because of the difficulties of growing SrO and RuO 2 altogether. [162,163] A typical difficulty is the chemisorption of the Ru precursor onto the SrO surface, which hinders the growth of SrO and RuO 2 . Alternatively, there was an attempt to form SRO by growing Srrich STO films on Ru electrodes to overcome the growth problems of SRO electrodes by ALD.…”

Section: Perovskite Electrodesmentioning

confidence: 99%

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Kim

Sung

Jeon

et al. 2022

Adv Materials Technologies

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Dynamic random access memories (DRAMs) are currently used as the core memory in computing systems because of their high speed and density. Their demand should continue to grow owing to increased data usage. A unit cell in a DRAM consists of one transistor and one capacitor, and the data are stored in the capacitor. As the size of the unit cell decreases to improve the memory density by aggressive scaling, it is important to secure sufficient capacitance in the capacitor. In this regard, technological advances in the fabrication of capacitors are of great importance; accordingly, the materials and processing of high‐k thin films require developmental innovations. Besides, it is necessary to develop electrode materials that optimize the function of high‐k thin films. In this review, recent advances in achieving sufficient capacitance in DRAM capacitors are summarized from structural and material/process perspectives, and the future direction of DRAM capacitor development is discussed. Atomic layer deposition (ALD) is a key technique that enables the growth of functional thin films for DRAM capacitors; thus, recent advances in the deposition of high‐k and electrode thin films grown using the ALD technique are addressed.

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Section: Perovskite Electrodesmentioning

confidence: 99%

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Kim

Sung

Jeon

et al. 2022

Adv Materials Technologies

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“…This finding indicated that the SRO film must be annealed under the oxygen-containing atmosphere to achieve the desired level of crystallization. However, PDA under the oxygen environment significantly decreased the Ru concentration by volatilizing Ru via RuO 4 formation, which did not result in the well-crystallized SRO film . Therefore, this study focused on the PDA method to achieve a well-crystallized SRO film without losing Ru concentration.…”

Section: Introductionmentioning

confidence: 99%

“…However, PDA under the oxygen environment significantly decreased the Ru concentration by volatilizing Ru via RuO 4 formation, which did not result in the well-crystallized SRO film. 17 Therefore, this study focused on the PDA method to achieve a wellcrystallized SRO film without losing Ru concentration.…”

Section: ■ Introductionmentioning

confidence: 99%

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

Lim

Kwon

et al. 2023

ACS Appl. Electron. Mater.

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SrRuO 3 (SRO) is a promising electrode material for the next-generation dynamic random access memory (DRAM) capacitor. This study focuses on the properties of SRO electrode films grown by combining the atomic-layer deposition of SrO and pulsed-chemical vapor deposition of RuO 2 component layers using Sr( i Pr 3 Cp) 2 ( i Pr 3 Cp = 1,2,4-trisisopropyl-cyclopentadienyl) and RuO 4 precursors, respectively. Changes in the Ru concentration and electrical properties of SRO electrode films during postdeposition annealing (PDA) for crystallization were examined in detail. SRO films were crystallized after PDA in an O 2 atmosphere, but the Ru concentration of SRO films was decreased due to volatile RuO 4 formation. Also, the morphology of the film was degraded by agglomeration, which degraded the film′s performance. A thin Al 2 O 3 film was deposited on or inserted into Ru and SRO films, and its effects on Ru-loss and crystallization were experimentally and theoretically investigated. The density functional theory calculation confirmed that Al substituted with Ru (Al Ru ) in the SRO film improved the crystallinity of cubic SRO. Thus, the Al 2 O 3 -layer-inserted or Al-substituted SRO films had a larger grain size, higher crystallinity, and improved surface morphology and maintained a lower resistivity down to 25 nm (∼1000 μΩ•cm).

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Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Cited by 2 publications

References 12 publications

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution

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Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Cited by 2 publications

References 12 publications

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution

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Enhancing the Crystallization and Properties of the SrRuO₃ Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO₂ through Al Substitution