Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Abstract

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Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

“…Despite this the surface is smooth. Due to the large lattice mismatch between GaN and sapphire (14.83%), several initial growth steps were introduced to improve the GaN quality [9]. In this work, first a 30 min nitridation at 700 1C was performed.…”

Intersubband absorption at 1.5–3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

“…First, the sapphire surface was nitridated for 30 minutes and then followed by growth of a ~4 nm AlN nucleation layer and a 280 nm thick GaN buffer layer. The purpose of these procedures and layer thicknesses were to reduce the layer defect density, enhance electron mobility and improve the crystalline quality [28,29]. The substrate temperature, nitrogen flow rate and plasma power were kept constant at T sub = 700 ºC, Φ = 1.5 sccm and P = 300 W, respectively.…”

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

“…[11] It has been demonstrated that the qualities of GaN films depend on growth conditions of the buffer layer, such as growth temperature, [12] thickness and III/V ratio. [13,14] Buffer layer can restore the large difference between GaN epilayers and sapphire substrates. Furthermore, the polarity of the GaN surface grown on (0001) sapphire substrates can be controlled by adjusting the growth process of the buffer layers.…”