Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films

Lee, Kyumin; Kim, Young-Jae; Na, Heedo; Sohn, Hyunchul

doi:10.1116/1.4917495

Cited by 6 publications

(4 citation statements)

References 33 publications

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“…). Lee et al 10 reported that the doping of aliovalent ions (e.g., Al 3+ , Mg 2+ , Nb 5+ , etc.) into HfO 2 resulted in an increase in the nonlattice oxygen (NLO) concentration and a reduction of the size of the grain boundary.…”

Section: ••mentioning

confidence: 99%

“…According to Lanza et al., RS behavior could be effectively modified by the formation and migration of oxygen vacancies (V O •• ). Lee et al reported that the doping of aliovalent ions (e.g., Al 3+ , Mg 2+ , Nb 5+ , etc.) into HfO 2 resulted in an increase in the nonlattice oxygen (NLO) concentration and a reduction of the size of the grain boundary.…”

Section: Introductionmentioning

confidence: 99%

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Toward a Reliable Synaptic Simulation Using Al-Doped HfO₂ RRAM

Roy

Niu

Wang

et al. 2020

ACS Appl. Mater. Interfaces

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The potential in a synaptic simulation for neuromorphic computation has revived the research interest of resistive random access memory (RRAM). However, novel applications require reliable multilevel resistive switching (RS), which still represents a challenge. We demonstrate in this work the achievement of reliable HfO 2 -based RRAM devices for synaptic simulation by performing the Al doping and the postdeposition annealing (PDA). Transmission electron microscopy and operando hard X-ray photoelectron spectroscopy results reveal the positive impact of Al doping on the formation of oxygen vacancies. Detailed I−V characterizations demonstrate that the 16.5% Al doping concentration leads to better RS properties of the device. In comparison with the other reported results based on HfO 2 RRAM, our devices with 16.5% Aldoping and PDA at 450 °C show better reliable multilevel RS (∼20 levels) performance and an increased on/off ratio. The 16.5% Al:HfO 2 sample with PDA at 450 °C shows good potentiation/depression characteristics with low pulse width (10 μs) along with a good On/Off ratio (>1000), good data retention at room temperature, and high temperature and good program/erase endurance characteristics with a pulse width of 50 ns. The synapse features including potentiation, depression, and spike time-dependent plasticity were successfully achieved using optimized Al-HfO 2 RRAM devices. Our results demonstrate the beneficial effects of Al doping and PDA on the enhancement of the performances of RRAM devices for the synaptic simulation in neuromorphic computing applications.

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Section: ••mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Toward a Reliable Synaptic Simulation Using Al-Doped HfO₂ RRAM

Roy

Niu

Wang

et al. 2020

ACS Appl. Mater. Interfaces

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“…The study found that regulation of the rate of V o migration and the defect states of CFs enhance the controllability of the RS operation. Lee et al investigated the doping effects of various aliovalent ions (Mg 2+ , Al 3+ , Nb +5 ) into HfO 2 on RS characteristics [ 197 ]. Doping with aliovalent elements caused an increase in the nonlattice oxygen concentration and a reduction in the grain size in HfO 2 .…”

Section: Effect Of V O In Hfo 2 ...mentioning

confidence: 99%

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Lee,

Yang,

Kwon

et al. 2023

Nano Convergence

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HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices. Graphical Abstract

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“…[28][29][30] Studies have shown that aliovalent ion doping via sputtering into HfO xbased devices have better uniformity of the low resistance state (LRS) and high resistance state (HRS) due to increased concentration of non-lattice oxygen. 28,31 Moreover, there have been previous studies on the impact of titanium doping in HfO x memristors with the active materials synthesized via sputtering. For example, devices containing a sputtered HfO x /TiO x / HfO x /TiO x multilayer (ML) have shown multilevel capability and analog reset characteristics.…”

Section: Introductionmentioning

confidence: 99%