Effect of Al<sub>0.06</sub>Ga<sub>0.94</sub>N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

Shuhaimi, Ahmad; Watanabe, Akihide; Egawa, Takashi

doi:10.1143/jjap.49.021002

Cited by 6 publications

(7 citation statements)

References 19 publications

(31 reference statements)

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“…Peak S1 grows stronger to become the main peak when the temperature is increased beyond 60 K. The phenomenon is consistent with our recent report elsewhere for MQW characteristic analysis with a similar Al 0.06 Ga 0.94 N/GaN SLS underlayer structure without a p-GaN contact layer [16]. Delocalized excitons at low temperatures enhance photonic transitions from a higher quantized level in the MQW [16,17]. The LED structure without the SLS underlayer shows peaks at 2.82 (S1) and 2.96 eV (S2), with S1 as the main peak at all temperatures.…”

Section: Resultssupporting

confidence: 93%

“…Note that the intensity for peak S2 at temperatures 10 and 20 K falls on almost the same line plot due to the small temperature difference. Peak S1 grows stronger to become the main peak when the temperature is increased beyond 60 K. The phenomenon is consistent with our recent report elsewhere for MQW characteristic analysis with a similar Al 0.06 Ga 0.94 N/GaN SLS underlayer structure without a p-GaN contact layer [16]. Delocalized excitons at low temperatures enhance photonic transitions from a higher quantized level in the MQW [16,17].…”

Section: Resultssupporting

confidence: 92%

“…We also show that a combination of selective lift-off (SLO) and metal-tometal bonding techniques is effective in improving the optical output power. Recently, we have reported reduction of TDD by insertion of an Al 0.06 Ga 0.94 N/GaN SLS underlayer [16]. This report also demonstrates an optimized LED structure with the insertion of an Al 0.06 Ga 0.94 N/GaN underlayer which further improves the optical and electrical performance of LEDs on Si.…”

Section: Introductionmentioning

confidence: 51%

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High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

Egawa¹,

Shuhaimi²

2010

J. Phys. D: Appl. Phys.

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We report high performance InGaN multiple-quantum well (MQW) light-emitting diodes (LEDs) grown on Si (1 1 1) substrates using metalorganic chemical vapour deposition (MOCVD). A high-temperature thin AlN layer and AlN/GaN multilayers have been used for the growth of a high-quality GaN-based LED structure on Si substrates. Reduction of the high-temperature AlN layer thickness promotes the formation of a tunnel junction at the AlN/Si interface which reduces the LED operating voltage. Optical output power of the LED on Si saturates at a higher injected current density due to higher thermal conductivity of Si than that of a sapphire substrate. At a high injection current, output power of the LED on Si is higher than that of the LED on sapphire. Cross-sectional transmission electron microscopy (TEM) indicates that the active layer of these LEDs consists of a dislocation-free pyramid-shaped (quantum-dot-like) structure. Additionally, the crack-free thin-film LED epilayer region was transferred onto a copper carrier using metal-to-metal bonding and the selective lift-off technique. A LED with high output power, low operating voltage and low series resistance was realized by this technique. Furthermore, optimization of LED on Si by insertion of an Al0.06Ga0.94N/GaN strained-layer superlattice underlayer into the structure exhibits improved internal quantum efficiency (ηiqe) in the MQW, higher optical emission intensity with higher saturation current, lower operation voltage of 3.2 V at 20 mA and a series resistance of 16 Ω, as well as narrower electroluminescence spectra.

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Section: Resultssupporting

confidence: 93%

Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 51%

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High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

Egawa¹,

Shuhaimi²

2010

J. Phys. D: Appl. Phys.

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“…4,5) Dislocations in GaN decrease the emission efficiency of GaN lightemitting diodes (LEDs) and laser diodes (LDs). 6) Stress in GaN films may cause indium separation during the growth of InGaN/GaN quantum wells. 7,8) Much attention has been paid to the growth of GaN nanostructures because of their interesting characteristics, such as low dislocation density, relaxation of stress, and large light extraction efficiency.…”

Section: Introductionmentioning

confidence: 99%

Characterization of GaN Nanowall Network and Optical Property of InGaN/GaN Quantum Wells by Molecular Beam Epitaxy

Zhong

Hane

2013

Jpn. J. Appl. Phys.

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A GaN nanowall network and InGaN/GaN quantum wells were grown on AlN/Si(111) substrates by molecular beam epitaxy (MBE). The morphology, polarity, structural, and optical properties of the GaN nanowall network were investigated. The lattice constants a 0= 3.193 Å and c 0 = 5.182 Å of the GaN nanowall network were obtained by X-ray diffraction (XRD), indicating that the GaN nanowall network is under low stress. Chemical etching test shows that the GaN nanowall network grown on an Al-polar buffer layer is Ga-polar. Photoluminescence (PL) spectra of InGaN/GaN quantum wells both on a GaN nanowall network and a GaN film were also measured. Different from the InGaN/GaN quantum wells on GaN film, the Fabry–Perot effect is not observed in the PL spectrum of the InGaN/GaN quantum wells on the GaN nanowall network owing to its antireflective porous structure. The emission wavelength gradually blue shifts from 408 to 391 nm with the decrease of temperature from 293 to 10 K. The GaN nanowall network grown on a Si substrate is not only compatible with mature Si micromachining technology but also may provide a novel nano-optical device.

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“…Due to the polarization (spontaneous polarization and piezoelectric polarization) effect, the GaN high electron mobility transistor (HEMT) can form a two-dimensional electron gas (2DEG) with a high concentration and high mobility in the potential barrier of the heterojunction interface without doping [ 3 , 4 , 5 ], which present less resistance, faster switching speed, smaller parasitic parameters, and more efficient heat dissipation compared with the traditional Si and GaAs transistors. For RF application, the commonly used substrate materials for GaN HEMTs are SiC and Si [ 6 , 7 , 8 ]. Compared with the SiC substrate, the Si substrate has a better cost advantage.…”

Section: Introductionmentioning

confidence: 99%

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

et al. 2023

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The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (Vknee), saturation current density (Id-sat), and cut-off frequency (ft) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the Vknee and improve the Id-sat on the premise of ensuring the ft. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage Vg is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high Id-sat of 750 mA/mm and a low Vknee of 2.0 V and presents ft and maximum frequency (fmax) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor OPTIM can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices.

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Effect of Al_0.06Ga_0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

Cited by 6 publications

References 19 publications

High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

Characterization of GaN Nanowall Network and Optical Property of InGaN/GaN Quantum Wells by Molecular Beam Epitaxy

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

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Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

Cited by 6 publications

References 19 publications

High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

Characterization of GaN Nanowall Network and Optical Property of InGaN/GaN Quantum Wells by Molecular Beam Epitaxy

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

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Product

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Effect of Al_0.06Ga_0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer