Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly β-FeSi2 film on SiO2/Si(100) substrate

Crystallization of Sputter-Deposited Amorphous (FeSi2)1–xAlx Thin Films

“…There are exothermal peaks corresponding to the six different heating rates. Heating rates of 10 °C/min to 60 °C/min were used in order to observe the temperature at which the exothermic peak is at its maximum . The activation energy can be calculated from Kissinger plots, as shown in Figure , where, φ is the heating rate and T m is the temperature at which the rate of reaction is at a maximum.…”

“…Therefore, for (β-FeSi 2 ) x Al 1– x thin films, Al atoms are impurities that substitute Si sites without changing the crystal structure. It is therefore not surprising that the incorporation of Al atoms into the β-FeSi 2 lattice increases the activation energy of the crystallization process of β-FeSi 2 . ,− In fact, Kaloshkin et al reported on the crystallization kinetics of amorphous Fe-based alloys and concluded that modifications of the chemical composition, which did not result in new phases cause an increased activation energy for the crystallization process.…”

“…Heating rates of 10 °C/min to 60 °C/ min were used in order to observe the temperature at which the exothermic peak is at its maximum. 18 The activation energy can be calculated from Kissinger plots, 19 as shown in Figure 2, where, φ is the heating rate and T m is the temperature at which the rate of reaction is at a maximum. By plotting the ln(ϕ/T m 2 ) against (1/T) for different heating rates, the activation energy, E a , can be obtained from the slope of the graph.…”

“…On the other hand, doping of β-FeSi 2 with Ni leads n-type behabior, making it possible to fabricate a p-n β-FeSi 2 homojunction device . Recent studies show that for Al-doped β-FeSi 2 , the Al dopant not only enhances the epitaxial growth of β-FeSi 2 , it also improves the quality of the interface between β-FeSi 2 and the Si onto which it is grown. , Enhancement in photoluminescence from β-FeSi 2 has also been observed with Al doping. − In our previous study, we have established the activation energy for β-FeSi 2 crystallization at 2.63 eV from an amorphous sputter-deposited thin film, which increases with increasing amounts of Al content . In this present work, a systematic and comprehensive study is presented on the crystallization and phase transition temperature of sputter deposited amorphous (FeSi 2 ) 1– x Al x thin film with Al content up to 0.081.…”

“…15−17 In our previous study, we have established the activation energy for β-FeSi 2 crystallization at 2.63 eV from an amorphous sputter-deposited thin film, which increases with increasing amounts of Al content. 18 In this present work, a systematic and comprehensive study is presented on the crystallization and phase transition temperature of sputter deposited amorphous (FeSi 2 ) 1−x Al x thin film with Al content up to 0.081. We have also optimized the maximum Al content in β-FeSi 2 film while preventing any phase change during thermal treatment of amorphous (FeSi 2 ) 1−x Al x thin film.…”