2016
DOI: 10.1166/mat.2016.1344
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Effect of Al Doping on Structural and Optical Parameters of ZnO Thin Films

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Cited by 9 publications
(7 citation statements)
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“…Where (hυ) represent photon energy, (B) is a parameter depends on transition probability [15], and m = 1/2 or 2/3 [16]. By plotting (αhυ) 2 versus hυ, the band gap value can be obtained from Figures 7 -9.…”
Section: Resultsmentioning
confidence: 99%
“…Where (hυ) represent photon energy, (B) is a parameter depends on transition probability [15], and m = 1/2 or 2/3 [16]. By plotting (αhυ) 2 versus hυ, the band gap value can be obtained from Figures 7 -9.…”
Section: Resultsmentioning
confidence: 99%
“…The optical energy gap (allowed and forbidden) can be computed by using this formula (Mishjil, 2016): αhν = B(hν-Eg ) r (3) Where, (Eg) is optical Energy gap, (hυ) is the photon energy, (B) is a constant depending on the transition probability, and (r) is a number that characterizes the optical absorption process, and can take the values; r = 1/2 for the allowed direct transition, r = 1/3 for the forbidden direct transition, whereas r = 2 for allowed indirect transition, r = 3 for the forbidden indirect transition.…”
Section: Figure2 the Absorption Coefficient Versus Photon Energy Fomentioning
confidence: 99%
“…9,10 Thin-film technology has developed rapidly due to being distinguished by basic characteristics of technological concern, such as cheap cost, accuracy, obsolescence, and shrinkage in the body. [11][12][13][14][15] Thus, thin films have found their way into many modern technological applications, such as the manufacture of electronic circuits, where they are used to construct inductors, resistors, capacitors, crystal diodes, and transistors. In addition, they can be employed to produce monocrystalline solar cells, the preparation of which requires complex and expensive techniques.…”
Section: Introductionmentioning
confidence: 99%