2019
DOI: 10.1016/j.matlet.2018.09.105
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Effect of Ag mixing in thermoelectric Ge2Sb2Te5 thin films

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Cited by 11 publications
(2 citation statements)
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“…[24] Meanwhile, it has low intrinsic lattice thermal conductivity, resulting from the strong interface phonon scattering. There are some researches on the thermoelectric properties of Ge 2 Sb 2 Te 5 film, [25][26][27][28][29][30][31] but few works focus on the bulk Ge 2 Sb 2 Te 5 . Yan et al studied the microstructures and electrical properties of bulk Ge 2 Sb 2 Te 5 .…”
Section: Introductionmentioning
confidence: 99%
“…[24] Meanwhile, it has low intrinsic lattice thermal conductivity, resulting from the strong interface phonon scattering. There are some researches on the thermoelectric properties of Ge 2 Sb 2 Te 5 film, [25][26][27][28][29][30][31] but few works focus on the bulk Ge 2 Sb 2 Te 5 . Yan et al studied the microstructures and electrical properties of bulk Ge 2 Sb 2 Te 5 .…”
Section: Introductionmentioning
confidence: 99%
“…11 Moreover, the A-ST thin film on the SO substrate yielded power factors comparable to those reported for Ag-doped Ge 2 Sb 2 Te 5 thin film. 23 Such interesting power factor values suggest that these films may be used in flexible thermoelectric devices. The thermoelectric properties of films deposited on the SO substrate are better than those on the PI substrate because they yield better phase quality (purity) in comparison to the case of the PI substrate, where the thermally unstable substrate induces the surface oxidation of Te atoms.…”
Section: Resultsmentioning
confidence: 99%