Effect of additions of Ar and He on the parameters and composition of the HBr plasma

Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma

“…The measured threshold energy for the direct ionization of Br radicals is 11.9 eV and agrees well with the previously reported value of 11.8 eV. [41][42][43][44] The dependence of the Br radical density on the substrate bias voltage is measured in HBr/Ar and HBr/Ar/O 2 plasmas using a blanket Si wafer and an Al 2 O 3 sputterdeposited Si wafer, as shown in Fig. 7.…”

“…The behavior of Br radicals in HBr inductively coupled plasma used to etch Si has been investigated with regard to the dependence on RF power, duty cycle of RF power, gas composition, gas pressure, chamber wall conditions, and so forth. [32][33][34][35][36][37][38][39][40][41][42][43][44][45] However, the dependence on the substrate bias voltage has hardly been investigated systematically, and the influence of the substrate bias on the Br surface reaction has not been clarified. In this study, the influence of the wafer bias voltage, wafer materials, and O 2 addition on the behavior of Br radicals in HBr/Ar plasma is investigated in terms of Br radical density and surface loss probability.…”