Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

Алтухов, И. В.; Dizhur, S. E.; Kagan, M. S.; Paprotskiy, S. K.; Khval’kovskii, N. A.; Buravlev, A. D.; Васильев, А. П.; Zadiranov, Yu. M.; Il’inskaya, N. D.; Usikova, A. A.; Ustinov, V. M.

doi:10.1134/s002136401602003x

Cited by 14 publications

(1 citation statement)

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“…They may operate in the terahertz range and contain hundreds or even thousands of layers, with thicknesses that may vary by orders of magnitude [7][8][9]. In this study, the synthesis of 'super-multiperiod' (SMP) superlattices (SLs) with 100 and more periods and/or large-thickness structures with high perfection of the layer morphology and composition is considered in relation to the creation of new near-room-temperature laser sources of infrared and terahertz radiation, including the formation of corresponding minibands (Wannier-Stark energy levels [10]) or sequential tunneling of carriers through many periods [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Matched characterization of super-multiperiod superlattices

Goray¹,

Pirogov²,

Sobolev³

et al. 2020

J. Phys. D: Appl. Phys.

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Heterostructures with multiple strongly coupled quantum wells, such as super-multiperiod (SMP) superlattices (SLs), are promising semiconductor devices, which may contain hundreds or even thousands of layers with 100 or more periods synthesized by molecular beam epitaxy (MBE) to high structural perfection. The proposed characterization method employs matched application of high-resolution x-ray diffractometry (XRD), reflectometry (XRR), and, for the first time, the deep XRR (DXRR) allows the study of SMP structures, as well as high-accuracy determination of the thicknesses of layers, roughness/diffuseness of boundaries using the rigorous scattering theory, and composition of solid solutions. Combining these methods with scanning transmission electron microscopy (STEM) enables characterization of SMP SLs and independent determination of these same parameters. The differences between the expected and obtained layer thicknesses by XRD and XRR were 1%-3% for AlGaAs/GaAs structures. The samples were characterized by sharp interfaces with the root-mean-square width of the transition layers of the order of a few Å, which is consistent with the XRR/DXRR and STEM analysis. Based on the data obtained for the thicknesses of layers, the composition of Al 0.3 Ga 0.7 As has been accurately determined by the x-ray methods. These results may be considered as the first step in the analysis of MBE-grown SMP structures with a number of periods up to 1000.

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