Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Kageura, Taisuke; Kato, Kanami; Yamano, Hayate; Suaebah, Evi; Kajiya, Miki; Kawai, Sunao; Inaba, Masafumi; Takenaka, Takashi; Haruyama, Moriyoshi; Yamada, K.; Onoda, Shinobu; Kada, Wataru; Hanaizumi, Osamu; Teraji, Tokuyuki; Isoya, Junichi; Kono, S.; Kawarada, Hiroshi

doi:10.7567/apex.10.055503

Cited by 25 publications

(28 citation statements)

References 18 publications

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“…However, surface defects may also play a role in our samples, especially at the lowest implantation dose and/or at low energy (i.e., near-surface NV centres). The impact of surface treatment on the properties of shallow NV centres has been the subject of many studies in the regime of very low implantation dose (typically ≤ 10 9 ions/cm 2 ), for which implantation-related damage may be negligible [35,47,54]. In this regime, one aspect to consider is the charge stability of the NV centres, which depends on the balance between the density of donors (e.g., nitrogen impurities) and the density of acceptor states on the surface.…”

Section: Effect Of Oxygen Annealingmentioning

confidence: 99%

Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond

et al. 2018

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We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centres. We find that, for the energy (4−30 keV) and dose (5×10 11 −10 13 ions/cm 2 ) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at ≥ 1100 • C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving ≈ 10-17 nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centres for high-sensitivity sensing and imaging applications.

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Section: Effect Of Oxygen Annealingmentioning

confidence: 99%

Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond

et al. 2018

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“…In general, for a given sample and experimental procedure, the steady-state charge state efficiency is difficult to predict. Contributing factors include the concentration of substitutional nitrogen and other defects serving as charge donors or acceptors (Groot-Berning et al, 2014) and their microscopic distributions (Collins, 2002;Doi et al, 2016); the wavelength, intensity, and duty cycle of optical illumination (Aslam et al, 2013;Doi et al, 2016;Ji and Dutt, 2016;Manson and Harrison, 2005); the application of a bias voltage (Doi et al, 2014;Grotz et al, 2012;Kato et al, 2013;Schreyvogel et al, 2014); and, for near-surface NVs, the diamond surface termination (Chu et al, 2014;Cui and Hu, 2013;Fu et al, 2010;Groot-Berning et al, 2014;Hauf et al, 2011;Kageura et al, 2017;Newell et al, 2016;Osterkamp et al, 2015;Rondin et al, 2010;Santori et al, 2009;Yamano et al, 2017). The charge state efficiency is likely affected by the conditions of diamond growth, as well as the irradiation dose (Mita, 1996) (see Sec.…”

Section: B Nv Charge State Efficiencymentioning

confidence: 99%

Sensitivity Optimization for NV-Diamond Magnetometry

Barry,

Schloss,

Bauch

et al. 2019

Preprint

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Solid-state spin systems including nitrogen-vacancy (NV) centers in diamond constitute an increasingly favored quantum sensing platform. However, present NV ensemble devices exhibit sensitivities orders of magnitude away from theoretical limits. The sensitivity shortfall both handicaps existing implementations and curtails the envisioned application space. This review analyzes present and proposed approaches to enhance the sensitivity of broadband ensemble-NV-diamond magnetometers. Improvements to the spin dephasing time, the readout fidelity, and the host diamond material properties are identified as the most promising avenues and are investigated extensively. Our analysis of sensitivity optimization establishes a foundation to stimulate development of new techniques for enhancing solid-state sensor performance.

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“…The maximum fluorescence intensity is observed after DNA hybridizes with the aptamer, and it decrease after ATP-driven release of the aptamer. In contrast, amine termination by a nitrogen/hydrogen radical beam only provides reusability for a short time [ 6 ], which is good for nitrogen vacancy center fabrication [ 39 ]. The carboxyl-modified sensor is a good candidate for frequent reuse.…”

Section: Resultsmentioning

confidence: 99%

Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection

Suaebah

Naramura

Myodo

et al. 2017

Sensors

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Here, we propose simple diamond functionalization by carboxyl termination for adenosine triphosphate (ATP) detection by an aptamer. The high-sensitivity label-free aptamer sensor for ATP detection was fabricated on nanocrystalline diamond (NCD). Carboxyl termination of the NCD surface by vacuum ultraviolet excimer laser and fluorine termination of the background region as a passivated layer were investigated by X-ray photoelectron spectroscopy. Single strand DNA (amide modification) was used as the supporting biomolecule to immobilize into the diamond surface via carboxyl termination and become a double strand with aptamer. ATP detection by aptamer was observed as a 66% fluorescence signal intensity decrease of the hybridization intensity signal. The sensor operation was also investigated by the field-effect characteristics. The shift of the drain current–drain voltage characteristics was used as the indicator for detection of ATP. From the field-effect characteristics, the shift of the drain current–drain voltage was observed in the negative direction. The negative charge direction shows that the aptamer is capable of detecting ATP. The ability of the sensor to detect ATP was investigated by fabricating a field-effect transistor on the modified NCD surface.

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Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Cited by 25 publications

References 18 publications

Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond

Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond

Sensitivity Optimization for NV-Diamond Magnetometry

Aptamer-Based Carboxyl-Terminated Nanocrystalline Diamond Sensing Arrays for Adenosine Triphosphate Detection

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