Editors-in-Chief

Gianchandani, Yogesh B.; Tabata, Osamu; Zappe, Hans

doi:10.1016/b978-044452190-3.09002-9

Cited by 14 publications

(28 citation statements)

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“…There has been increasing interest in the advanced functions of uncooled infrared (IR) image sensors with microelectromechanical system (MEMS)-based pixel structures 1 to expand the applications of IR sensing. 2 In particular, there is much in a spectral discrimination function that enables uncooled IR sensors to identify objects through their radiation spectrum, which is useful for many applications such as fire detection and gas analysis.…”

Section: Introductionmentioning

confidence: 99%

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

et al. 2013

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Abstract. A wavelength selective wideband uncooled infrared (IR) sensor that detects middle-wavelength and long-wavelength IR (MWIR and LWIR) regions has been developed using a two-dimensional plasmonic absorber (2-D PLA). The 2-D PLA has a Au-based 2-D periodic dimple-array structure, where photons can be manipulated using a spoof surface plasmon. Numerical investigations demonstrate that the absorption wavelength can be designed according to the surface period of dimples over a wide wavelength range (MWIR and LWIR regions). A microelectromechanical system-based uncooled IR sensor with a 2-D PLA was fabricated using complementary metal oxide semiconductor and micromachining techniques. Measurement of the spectral responsivity shows that the selective enhancement of responsivity is achieved over both MWIR and LWIR regions, where the wavelength of the responsivity peak coincides with the dimple period of the 2-D PLA. The results provide direct evidence that a wideband wavelength selective IR sensor can be realized simply by design of the 2-D PLA surface structure without the need for vertical control in terms of gap or thickness. A pixel array where each pixel has a different detection wavelength could be developed for multicolor IR imaging.

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Section: Introductionmentioning

confidence: 99%

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

et al. 2013

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“…For compensating such a difference in etched depth, the technique for reducing RIE-lag that increases the difference of deposited thickness (t w − t n ) by modifying the chamber pressure during the deposition step has been reported [2]. Lai et al has These two techniques are similar in regard to the utilization of a retardation of Si etching start for wider trench.…”

Section: Principlementioning

confidence: 99%

“…In the Si dry etching technology, the RIE-lag, a dependence of the etching rate on a mask opening width, is a well-known phenomenon [1,2]. On the other hand, most of the micro electro mechanical systems (MEMS) devices fabricated on the substrate have various opening sizes within a same chip.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the DRIE process called 'Bosch process', which distinguishes the etching step from the passivation step by switching the introducing gases, has also been reported to be able to suppress the RIE-lag by modifying some process parameters a Correspondence to: Junji Ohara. E-mail: joohara@rlab.denso.co.jp * Research Laboratories, Denso Corporation, 500-1, Minamiyama, Komenoki, Nisshin, Aichi, 470-0111, Japan * * Department of Micro-Nano System Engineering, Nagoya University, Froh-cho, Chikusa-ku, Nagoya, 464-8603, Japan [2,8]. However, a limitation of controllable process range exists in these techniques.…”

Section: Introductionmentioning

confidence: 99%

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Development of RIE‐lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method

Ohara

Asami

Takeuchi

et al. 2010

IEEJ Transactions Elec Engng

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In this study, we have developed a new reactive ion etching (RIE)-lag reduction technique in Si deep etching. The conventional RIE-lag reduction technique has a dependence of polymeric layer deposition thickness on mask opening width in the deep reactive ion etching (DRIE) process (Bosch process). However, in our experiment, when the RIE-lag was suppressed, the polymeric layer on the wider trench bottom remained and caused Black Si under typical process condition. Even if the Black Si is suppressed by optimization of process parameters, it appears when the trench becomes deeper. Therefore, the remaining of the polymeric layer is considered to determine the depth range for the RIE-lag reduction. In order to avoid this limitation, we have developed a new RIE-lag reduction technique that forms a double protection layer consisting of polymer and SiO 2 on the trench bottom before the etching step in the DRIE process. The SiO 2 layer formed by O 2 plasma irradiation under polymeric layer has higher ability for removal than that of the polymeric layer and it can be removed clearly without Black Si phenomenon. Experimental result shows that this technique can obtain RIE-lag free region up to an aspect ratio of 13. Within this aspect ratio range, the RIE-lag free effect is considered to be applicable not only to trench pattern but also to other two-dimensional mask patterns except hall pattern. 

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“…In this review, we will only focus on the chip-based detection methods based on MEMS and nanotechnologies [ 44 , 45 , 46 , 47 ] for monitoring some promising protein biomarkers of AD, PD and glaucoma disease.…”

Section: Introductionmentioning

confidence: 99%

On-Chip Detection of the Biomarkers for Neurodegenerative Diseases: Technologies and Prospects

et al. 2020

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Alzheimer’s disease (AD), Parkinson’s disease (PD) and glaucoma are all regarded as neurodegenerative diseases (neuro-DDs) because these diseases are highly related to the degeneration loss of functions and death of neurons with aging. The conventional diagnostic methods such as neuroimaging for these diseases are not only expensive but also time-consuming, resulting in significant financial burdens for patients and public health challenge for nations around the world. Hence early detection of neuro-DDs in a cost-effective and rapid manner is critically needed. For the past decades, some chip-based detection technologies have been developed to address this challenge, showing great potential in achieving point-of-care (POC) diagnostics of neuro-DDs. In this review, chip-based detection of neuro-DDs’ biomarkers enabled by different transducing mechanisms is evaluated.

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Editors-in-Chief

Cited by 14 publications

References 0 publications

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

Wavelength selective wideband uncooled infrared sensor using a two-dimensional plasmonic absorber

Development of RIE‐lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method

On-Chip Detection of the Biomarkers for Neurodegenerative Diseases: Technologies and Prospects

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