2014
DOI: 10.1088/0953-8984/26/31/315009
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Edge states of a three-dimensional topological insulator

Abstract: We use the bulk Hamiltonian for a three-dimensional topological insulator such as Bi2Se3 to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the surface Hamiltonians (which are derived from the bulk Hamiltonian) and numerical methods based on a lattice discretization of the bulk Hamiltonian. We find that the application of a potential barrier along an edge can give rise to states localized at that edge. These states have an u… Show more

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Cited by 25 publications
(28 citation statements)
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“…Its dimensional reduction with a mass p 4 = m and p 5 = 0 leads to the 3D chiral topological insulator of class AIII. (Two more concrete examples in 3D topological insulator were studied in [25] and [26], in which the boundary parameters appear as potential barriers.) For this size of the Hamiltonians, typically there could appear two edge states for a single boundary.…”
Section: Introductionmentioning
confidence: 99%
“…Its dimensional reduction with a mass p 4 = m and p 5 = 0 leads to the 3D chiral topological insulator of class AIII. (Two more concrete examples in 3D topological insulator were studied in [25] and [26], in which the boundary parameters appear as potential barriers.) For this size of the Hamiltonians, typically there could appear two edge states for a single boundary.…”
Section: Introductionmentioning
confidence: 99%
“…Our results are therefore specific to this material but they will be observable to some degree in any TI material, especially those where interaction effects are weak and the material has a single Dirac cone. Examples of similar approaches to that taken in this work can be found in [13,14], amongst many others.…”
Section: Introductionmentioning
confidence: 83%
“…Very recently, some early experimental realizations of second-order topological insulators appeared [47][48][49][50], where Ref. [47] uses the bismuth nanowire which was previously shown to support edge states [51]. This work was motivated by a colloquium on C4T-symmetric higher-order topological insulators by Titus Neupert at FU Berlin and subsequent discussions.…”
Section: Prl 119 246401 (2017) P H Y S I C a L R E V I E W L E T T Ementioning
confidence: 99%