2010
DOI: 10.1088/0268-1242/25/4/045003
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Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

Abstract: We have investigated an edge-emitting tilted wave laser (TWL) with the active region based on GaInAs/GaAs quantum wells. In the TWL the wavelength stabilization is based on the coupling of the laser active waveguide cavity to a specially introduced thick epitaxial layer and the emission wavelength is defined by the combined cavity mode preferably by a single dominating mode. The TWL wafer has been grown by metal-organic chemical vapour deposition. Laser parameters have been investigated both in pulsed and CW m… Show more

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Cited by 5 publications
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“…The concept of TWL (Ref. 8) is based on the existence of tilted modes originating in planar waveguides with thin cladding layers. The laser waveguide, schematically presented in Fig.…”
Section: Waveguide Designmentioning
confidence: 99%
“…The concept of TWL (Ref. 8) is based on the existence of tilted modes originating in planar waveguides with thin cladding layers. The laser waveguide, schematically presented in Fig.…”
Section: Waveguide Designmentioning
confidence: 99%