Refractive index of laser active region based on InAs/InGaAs quantum dots

Abstract

The effective refractive index of the active region of 1.3 μm edge-emitting tilted wave lasers based on InAs/InGaAs self-assembled quantum dots by the analysis of the far-field pattern is investigated. The obtained values of 3.485 and 3.487 in the operating lasers and in the cold waveguides, respectively, are well comparable with the refractive index of bulk InAs at corresponding wavelength. Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 09/29/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Gordeev et al.: Refractive index of laser active region based on InAs/InGaAs quantum dots Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 09/29/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Gordeev et al.: Refractive index of laser active region based on InAs/InGaAs quantum dots Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 09/29/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Gordeev et al.: Refractive index of laser active region based on InAs/InGaAs quantum dots Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 09/29/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Gordeev et al.: Refractive index of laser active region based on InAs/InGaAs quantum dots Downloaded From: http://nanophotonics.spiedigitallibrary.org/ on 09/29/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Gordeev et al.: Refractive index of laser active region based on InAs/InGaAs quantum dots

Ground-state lasing in high-power InAs/GaAs quantum dots-in-a-well laser using active multimode interference structure

“…Therefore, it is possible to suppress ES lasing using the active MMI-LD structure. As reported in [20,21], the refractive index of the QD active region n c is changed with injection carriers and temperature. However, this carrier induced refractive index is three times smaller in QD than that in QW.…”

Low-Energy Ion Technique for Semiconductor Surface Preparation

“…Nanostructured materials are objects of close scientific interest [1][2][3]. This is due to their considerable applied potential in the development of lasers, optical sensors, photonics devices, photoelectric converters based on multilayer heterostructures [4,5].…”