Edge emission in AgGaS2 single crystals

Aicardi, J.P.; Leyris, J.P.

doi:10.1016/0022-3697(82)90216-5

“…AGS melts at 996°C and appears yellow at room temperature [4,8]. AGS has direct energy gap of 2.69 eV at room temperature [9] and transparent in the visible and infrared range from 0.45 to 13 μm [10]. Crack-free, transparent, large-size and high quality AGS single crystals are required to fabricate non-linear optical devices.…”

Section: Introductionmentioning

confidence: 99%

Stoichiometric single crystal growth of AgGaS₂ by iodine transport method and characterization

Prabukanthan

¹

,

Dhanasekaran²

2008

Cryst. Res. Technol.

View full text Add to dashboard Cite

High quality single crystals of ternary AgGaS 2 (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X-ray diffraction and single crystal X-ray diffraction studies indicate that the as-grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X-ray rocking curve for the as-grown AGS single crystal is 5 arcsec. The energy dispersive X-ray analysis (EDAX) and optical transmission spectra of as-grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as-grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as-grown AGS single crystal has been measured.

show abstract

“…AgGaS 2 (AGS) ternary semiconductor has recently attained a special interest for the middle and deep infrared applications due to its large non-linear optical coefficients and high transmission in the IR region [1,2]. AGS exhibits a chalcopyrite structure and has a direct bandgap value of 2.69 eV at room temperature [3,4]. Swift heavy ions (SHI) play a vital role in modification of the properties of films, foils and surfaces of bulk solids.…”

Section: Introductionmentioning

confidence: 99%

Effect of swift heavy ion Ag⁹⁺irradiation on the surface morphology, structure and optical properties of AgGaS₂single crystals

Prabukanthan

¹

,

Asokan

²

,

Kanjilal

³

et al. 2008

Semicond. Sci. Technol.

View full text Add to dashboard Cite

AgGaS 2 (AGS) single crystals grown by chemical vapor transport (CVT) method were irradiated with Ag 9+ ions (120 MeV) with various ion fluences. The irradiation was carried out at room temperature (RT) and at liquid nitrogen temperature (LNT). A glancing angle x-ray diffraction (GAXRD) analysis reveals a huge lattice disorder at RT irradiation. This is observed from an increase in the full width at half maximum (FWHM) and a decrease in the intensity of the AGS (1 1 2) peak. However, there is no change in the FWHM of the (1 1 2) peak but the intensity slightly decreases at LNT irradiation. Also, AGS (3 0 3) peak is not observed for the samples irradiated with the fluences of 5 × 10 13 and 1 × 10 13 ions cm −2 at RT conditions. The GAXRD results show the decrease in degree of crystallinity upon ion irradiation at RT while there is not much degradation in crystallinity upon ion irradiation at LNT. But the LNT irradiation on AGS has its own effects. Atomic force microscope (AFM) studies show that the roughness of AGS increases on increasing the ion fluences at LNT and at RT. Also, it is found that there is an increase in the surface defects with fluences of Ag 9+ ion irradiation when compared to pristine AGS. UV-visible transmission spectra show that the percentage of transmission and bandgap energy decrease with increasing ion fluences and also that the peaks are broadened at LNT and at RT. The photoluminescence (PL) spectra were analyzed as a function of irradiation ion fluences in the AGS crystals at RT. It has been found that the emission intensities of band-to-band transition decrease with increase of ion fluences at LNT and at RT.

show abstract

“…AGS exhibits a chalcopyrite structure and has a direct bandgap value of 2.69 eV at room temperature [3,4]. Swift heavy ions (SHI) play a vital role in modification of the properties of films, foils and surfaces of bulk solids.…”

Section: Introductionmentioning

confidence: 99%

Fowler–Nordheim Current Oscillations in Si(111)/SiO₂/Twisted-Si(111) Tunneling Structures

Moraru

¹

,

Katô

²

,

Horiguchi

³

et al. 2006

jjap

1

0

View full text Add to dashboard Cite

AgGaS 2 (AGS) single crystals grown by chemical vapor transport (CVT) method were irradiated with Ag 9+ ions (120 MeV) with various ion fluences. The irradiation was carried out at room temperature (RT) and at liquid nitrogen temperature (LNT). A glancing angle x-ray diffraction (GAXRD) analysis reveals a huge lattice disorder at RT irradiation. This is observed from an increase in the full width at half maximum (FWHM) and a decrease in the intensity of the AGS (1 1 2) peak. However, there is no change in the FWHM of the (1 1 2) peak but the intensity slightly decreases at LNT irradiation. Also, AGS (3 0 3) peak is not observed for the samples irradiated with the fluences of 5 × 10 13 and 1 × 10 13 ions cm −2 at RT conditions. The GAXRD results show the decrease in degree of crystallinity upon ion irradiation at RT while there is not much degradation in crystallinity upon ion irradiation at LNT. But the LNT irradiation on AGS has its own effects. Atomic force microscope (AFM) studies show that the roughness of AGS increases on increasing the ion fluences at LNT and at RT. Also, it is found that there is an increase in the surface defects with fluences of Ag 9+ ion irradiation when compared to pristine AGS. UV-visible transmission spectra show that the percentage of transmission and bandgap energy decrease with increasing ion fluences and also that the peaks are broadened at LNT and at RT. The photoluminescence (PL) spectra were analyzed as a function of irradiation ion fluences in the AGS crystals at RT. It has been found that the emission intensities of band-to-band transition decrease with increase of ion fluences at LNT and at RT.

show abstract

Edge emission in AgGaS2 single crystals

Cited by 8 publications

References 11 publications

Stoichiometric single crystal growth of AgGaS₂ by iodine transport method and characterization

Stoichiometric single crystal growth of AgGaS₂ by iodine transport method and characterization

Effect of swift heavy ion Ag⁹⁺irradiation on the surface morphology, structure and optical properties of AgGaS₂single crystals

Fowler–Nordheim Current Oscillations in Si(111)/SiO₂/Twisted-Si(111) Tunneling Structures

Contact Info

Product

Resources

About

Edge emission in AgGaS2 single crystals

Cited by 8 publications

References 11 publications

Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

Effect of swift heavy ion Ag9+irradiation on the surface morphology, structure and optical properties of AgGaS2single crystals

Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures

Contact Info

Product

Resources

About

Stoichiometric single crystal growth of AgGaS₂ by iodine transport method and characterization

Stoichiometric single crystal growth of AgGaS₂ by iodine transport method and characterization

Effect of swift heavy ion Ag⁹⁺irradiation on the surface morphology, structure and optical properties of AgGaS₂single crystals

Fowler–Nordheim Current Oscillations in Si(111)/SiO₂/Twisted-Si(111) Tunneling Structures