We theoretically investigated the variations in the characteristics of graphene-nanoribbon-based field-effect transistors (GNR FETs) using the nonequilibrium Green's function method. In this study, the drain current (I d ) was calculated as a function of gate voltage (V g ) for GNR FETs with various edge disorder concentrations (P). From the obtained I d -V g curves, we estimated the device characteristics. We found that the variations of these device characteristics became larger with increasing P, as evidenced by a dramatic change in the shapes of their histograms. Furthermore, we clarified that these variations were caused by Anderson localization originating from the edge disorder.