Theoretical Design of Edge-Disordered Graphene Nanorribbon FETs

Abstract

We theoretically and computationally examined carrier localization in semiconducting edge-disordered graphene nanoribbons (ED-GNRs) with sub-100 nm lengths that correspond to the typical gate length for field-effect transistors. We numerically found that the localization length of ED-GNRs is proportional to the square of ribbon width and inversely proportional to the edge-disordered concentration. Furthermore, we obtained an analytical formula of the localization length in terms of the GNR width and the roughness concentration.