ECV Doping Profile Measurements in Silicon Using Conventional Potentiostat

Ghorbani‐HasanSaraei, Azade; Eshraghi, Mohamad Javad; Tajabadi, Fariba; Massoudi, Abouzar

doi:10.1007/s11664-018-6670-2

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…This involved the use of an electrolyte solution to create a Schottky contact for the concentration measurement in the first mode. In the second mode, the sample was etched by anodic dissolution to a defined depth (e.g., 10 nm) until the next concentration measurement started using mode 1 [36,37]. The surface area of the sample that was exposed for etching was 1.13 mm 2 .…”

Section: Resultsmentioning

confidence: 99%

Area-Selective Growth of Zinc Oxide Nanowire Arrays for Piezoelectric Energy Harvesting

Anang,

Wei,

et al. 2024

Micromachines

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In this work, we present the area-selective growth of zinc oxide nanowire (NW) arrays on patterned surfaces of a silicon (Si) substrate for a piezoelectric nanogenerator (PENG). ZnO NW arrays were selectively grown on patterned surfaces of a Si substrate using a devised microelectromechanical system (MEMS)-compatible chemical bath deposition (CBD) method. The fabricated devices measured a maximum peak output voltage of ~7.9 mV when a mass of 91.5 g was repeatedly manually placed on them. Finite element modeling (FEM) of a single NW using COMSOL Multiphysics at an applied axial force of 0.9 nN, which corresponded to the experimental condition, resulted in a voltage potential of −6.5 mV. The process repeated with the same pattern design using a layer of SU-8 polymer on the NWs yielded a much higher maximum peak output voltage of ~21.6 mV and a corresponding peak power density of 0.22 µW/cm3, independent of the size of the NW array. The mean values of the measured output voltage and FEM showed good agreement and a nearly linear dependence on the applied force on a 3 × 3 µm2 NW array area in the range of 20 to 90 nN.

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Section: Resultsmentioning

confidence: 99%