ECR-plasma parameters and properties of thin DLC films

Inaba, Hiroshi; Fujimaki, Shigehiko; Furusawa, K.; Todoroki, S.

doi:10.1016/s0042-207x(02)00120-3

Cited by 9 publications

(1 citation statement)

References 11 publications

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“…Recently, much research has been carried out for synthesizing the high quality diamond thin-films using microwave plasma enhanced chemical vapor deposition (MWPCVD) [13][14][15][16][17], radio frequency (RF), DC plasma CVD [18,19], electron cyclotron resonance (ECR) plasma CVD [20][21][22], the hot filament CVD [23,24], the ion beam deposition method (IBD) [25], laser ablation, combustion flame, etc [26][27][28]. Generally, the low pressure CVD processes for synthesis of diamond films have been used with the activating gas phase carbon-containing precursor of CH 4 .…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

Han¹

2012

Journal of Electrical Engineering and Technology

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-The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and Hβ on Hα, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

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