Abstract:Tin monoselenide (SnSe) nanoparticles (NPs) have great potential to replace the conventional absorbers used in the fabrication of thin film solar cells.
“…The EDAX spectra show the existence of Sn, Se, and K in the stoichiometric compositions. The atomic ratio for pure SnSe is 1.06:1 which is nearly stoichiometric and is in good agreement with the standard value [22,25,26]. The ratio is lowered significantly as K doping into SnSe increases because Sn composition decreases due to the substitution of K into it.…”
Section: X-ray Diffractionsupporting
confidence: 81%
“…The samples are in single phase and indexed well by indicating the lattice planes (2 0 1), (2 1 0), (1 1 1), (4 0 0), (3 1 1), (4 1 1), (0 2 0), (5 0 1), (5 1 1), and (4 2 0). The XRD data are in good agreement with standard PDF file no: #48-1224 [3,22]. All the K x Sn 1-x Se compositions have the strongest intensity along the direction of the (4 0 0) plane indicating that the preferred orientation is along (4 0 0) direction.…”
In our current study, we have investigated the effect of potassium doping on AC conductivity and the dielectric properties of tin selenide (SnSe). Potassiumdoped SnSe (K x Sn 1-x Se with x = 0-20 mol%) polycrystals were synthesized via hydrothermal method. The phase of the synthesized samples was confirmed to be single phase with orthorhombic structure as obtained by X-ray diffraction. The average crystallite size for all the K x Sn 1-x Se samples was calculated using the Debye-Scherrer formula and they were found to be decreased as potassium (K) concentration increased. Scanning electron microscope revealed plate-like morphology for all K x Sn 1-x Se samples. Transmission electron microscope studies at high resolution showed plate-like morphology which is connected with small nanorods for the K 0.20 Sn 0.80 Se. Optical studies were carried out using UV-Vis-NIR diffuse reflectance spectroscopy. The bandgap values were found to be decreased as K concentration is increased. Temperature-dependent dielectric studies were studied for all K x Sn 1-x Se samples. Correlated barrier hopping is responsible for the transport of charge carriers in the conduction mechanism. Electrical modulus studies reveal a non-Debye-type dielectric relaxation phenomenon. The results of dielectric studies specify the application of K-doped SnSe in frequency related and capacitive storage devices.
“…The EDAX spectra show the existence of Sn, Se, and K in the stoichiometric compositions. The atomic ratio for pure SnSe is 1.06:1 which is nearly stoichiometric and is in good agreement with the standard value [22,25,26]. The ratio is lowered significantly as K doping into SnSe increases because Sn composition decreases due to the substitution of K into it.…”
Section: X-ray Diffractionsupporting
confidence: 81%
“…The samples are in single phase and indexed well by indicating the lattice planes (2 0 1), (2 1 0), (1 1 1), (4 0 0), (3 1 1), (4 1 1), (0 2 0), (5 0 1), (5 1 1), and (4 2 0). The XRD data are in good agreement with standard PDF file no: #48-1224 [3,22]. All the K x Sn 1-x Se compositions have the strongest intensity along the direction of the (4 0 0) plane indicating that the preferred orientation is along (4 0 0) direction.…”
In our current study, we have investigated the effect of potassium doping on AC conductivity and the dielectric properties of tin selenide (SnSe). Potassiumdoped SnSe (K x Sn 1-x Se with x = 0-20 mol%) polycrystals were synthesized via hydrothermal method. The phase of the synthesized samples was confirmed to be single phase with orthorhombic structure as obtained by X-ray diffraction. The average crystallite size for all the K x Sn 1-x Se samples was calculated using the Debye-Scherrer formula and they were found to be decreased as potassium (K) concentration increased. Scanning electron microscope revealed plate-like morphology for all K x Sn 1-x Se samples. Transmission electron microscope studies at high resolution showed plate-like morphology which is connected with small nanorods for the K 0.20 Sn 0.80 Se. Optical studies were carried out using UV-Vis-NIR diffuse reflectance spectroscopy. The bandgap values were found to be decreased as K concentration is increased. Temperature-dependent dielectric studies were studied for all K x Sn 1-x Se samples. Correlated barrier hopping is responsible for the transport of charge carriers in the conduction mechanism. Electrical modulus studies reveal a non-Debye-type dielectric relaxation phenomenon. The results of dielectric studies specify the application of K-doped SnSe in frequency related and capacitive storage devices.
“…Li and coworkers also reported a wet coprecipitation method for large-scale synthesis of Cu 2 Se nanoparticles, which exhibited an outstanding ZT value (up to 1.35 at 850 K) after hot press sintering [71]. Pejjai et al developed a similar eco-friendly reduction-precipitation approach to prepare SnSe nanoparticles in a short reaction time of 10 min [78]. some metal chalcogenide nanostructures (ZTmax = 0.38 at 300 °C for SnSe; ZTmax = 0.27 at 230 °C for Bi2Se3) due to the effectively reduced thermal conductivity.…”
Section: Chemical Reduction-precipitation Methodsmentioning
Metal chalcogenide materials are current mainstream thermoelectric materials with high conversion efficiency. This review provides an overview of the scalable solution-based methods for controllable synthesis of various nanostructured and thin-film metal chalcogenides, as well as their properties for thermoelectric applications. Furthermore, the state-of-art ink-based processing method for fabrication of thermoelectric generators based on metal chalcogenides is briefly introduced. Finally, the perspective on this field with regard to material production and device development is also commented upon.
“…In SnSe, only one impurity phase of SnSe 2 is present. 71 Therefore, the formation of phase SnSe is easier. Also, being consists of earth-abundant, inexpensive, and eco-friendly elements, SnSe has attracted significant attention.…”
SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.
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