EBES: A practical electron lithographic system

Lithographic Resist Materials Chemistry

“…The electron-beam exposure requirements of these materials were compatible with the dose outputs ( � I l1C/cm2 at 10 k V) of raster scan machines developed by AT&T Bell Laboratories (17). These resists typically contained epoxy, vinyl, and halogen functionalities (18,19).…”

High resolution optical lithography or high throughput electron beam lithography: The technical struggle from the micro to the nano-fabrication evolution

“…828 At the first stage, the masks (reticles) were fabricated by the 829 mechanical pattern generator. Then the electron beam mask writer 830 EBES was developed by Bell Laboratories at the end of 1970's [116]. 831 The system utilizes the point beam with the raster scan system on 832 a continuous moving stage and 10 keV beam acceleration.…”

“…The development of optical lithography 110 As mentioned above, we have been using optical lithography for 111 the fabrication of ULSIs in the industrial environment for more 112 than four decades [19]. During this period, many declarations of 113 the demise of optical lithography were made, but each time the 114 technology was salvaged by the introduction of various resolution 115 improvement techniques such as changes in the exposure scheme, 116 improvements in optical systems, exposure wavelength reduction 117 and resolution enhancement technologies. The details of these 118 resolution improvements are described below.…”

Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

“…Traditional e-beam lithography 3 suffers from low throughput and was generally deemed not suitable for highvolume manufacturing (HVM). However, advances in micro electromechanical systems (MEMS) technology in the last decade have enabled the pixilation of a high-current ebeam, enabling massively parallel e-beam writing.…”