Early stages of IBAD-film growth: Differences between (100) and polycrystalline Mo substrates

Defects and morphological changes in nanothin Cu films on Mo(100) studied by thermal helium desorption spectrometry

“…The use of thermal helium desorption spectrometry, which has been employed to study the defects in single crystals [5][6][7][8] and thin films, [28][29][30] has been extended to in situ monitoring of the morphological changes upon heating in thin Cu films ͑10-300Å͒ deposited on Mo(100). It was found that the Cu films on Mo(100) undergo an island formation on annealing, indicating that these films are metastable at the deposition temperature of 300 K. The island formation is very pronounced, resulting in islands covering ϳ15% of the surface and a continuous one-or twomonolayer Cu film remaining on the rest of the substrate.…”

“…[27][28][29][30] The base pressure of the setup was Ͻ1.0ϫ 10 −9 mbar. [27][28][29][30] The base pressure of the setup was Ͻ1.0ϫ 10 −9 mbar.…”