Early stage of the electron kinetics in swift heavy ion tracks in dielectrics

Nuclear Instruments and Methods in Physics Research Section B:

Волков

et al. 2012

a b s t r a c tEffects of applications of two different models of atomic ionizations in MC simulations describing excitation of the electronic subsystem of an insulator in tracks of swift heavy ions decelerated in the electronic stopping regime are investigated. The first mechanism is based on binary collisions of a fast projectile with atomic electrons considered as independent. The second one assumes redistribution of the energy transferred to an atom from an ion between the atomic electrons before autoionization of the excited atom. It is demonstrated that an appreciable difference occurs only in the kinetics of the most energetic electrons appeared during the ionization. This difference affects only a small fraction of the excess electronic energy in the far periphery of a track.

Section: Monte-carlo Simulationsmentioning

confidence: 99%

Section: Monte-carlo Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effect of interaction of atomic electrons on ionization of an insulator in swift heavy ion tracks

Баранов

Nuclear Instruments and Methods in Physics Research Section B:

Волков

et al. 2012

Formation of the defect halo of swift heavy ion tracks in LiF due to spatial redistribution of valence holes

Physica Status Solidi (b)

Schwartz

Trautmann

et al. 2013

Self Cite

The fundamental effect of the relaxation kinetics of the ensemble of generated valence holes on structure transformations in swift heavy ions tracks in alkali halides is demonstrated. The parameters of the spatial distributions of F‐color centers formed in the nanometric vicinities of the trajectories of different ions (from C to U) decelerated in LiF in the electronic stopping regime were extracted from the in situ spectroscopy experiments. Formation of these defects results from self‐trapping of valence holes appearing during material ionizations followed by creation and decay of self‐trapped excitons. The Monte‐Carlo model is applied in order to determine the initial radial distributions of valence holes in tracks of different ions. The detected large difference between the hole and defect distributions indicates fast and long‐range diffusion of valence holes from the ion trajectory before their self‐trapping. The averaged diffusion coefficient (Dh) of hot holes at the subpicosecond time scale after the projectile passage as well as the conversion efficiencies of valence holes into color centers (β) in relaxing tracks of different ions are estimated (Dh = 0.016–1.4 cm2 s−1, β = 0.01–0.04).

Electron emission from silicon and germanium after swift heavy ion impact

Rymzhanov¹,

Волков

2014

Phys. Status Solidi B

Self Cite

The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by a penetrating swift heavy ion (SHI). The cross sections of interaction of an ion with the electron subsystem of a target are calculated via the complex dielectric function formalism, which accounts for all the collective modes of the electron ensemble of the target. The predicted electron inelastic mean free paths are in a very good agreement with those from the NIST database. The calculated SHI energy losses coincide well with SRIM and CasP codes. The model is used to calculate the spectra of electrons emitted from germanium and silicon targets during SHI irradiation. These spectra agree well with the experimental data.