Early Assessment of the Photovoltaic Potentialities of RAD Polysilicon Sheets

Belouet, C.; Fabre, E.; Makram–Ebeid, S.; Phuoc, N. T.; Texier, Catherine

doi:10.1007/978-94-009-9487-4_14

Cited by 5 publications

(2 citation statements)

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“…doping degrades the abruptness in the transition between the doping of the substrate and the epitaxial layer and also increases the background doping concentration in the epitaxial layers, many studies have been conducted in order to minimize autodoping effects during silicon vapor phase epitaxial growth (1)(2)(3)(4). These studies have shown that autodoping during vapor phase epitaxial growth arises primarily from (i) dopant outgassing into the vapor phase prior to the commencement of epitaxial growth, (ii) dopant evaporation from the back surface of the wafer during epitaxial growth, and (iii) dopant introduction into the gas phase due to substrate etching by halides during epitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

“…The interest in the preparation of photovoltaic silicon solar cells via inexpensive processes has resulted in the publication of a variety of studies dealing with the growth of silicon onto nonsilicon substrates, particularly graphite (1)(2)(3)(4). One of the main problems in the chemical vapor deposition (CVD) of silicon onto foreign substrates is the poor erystallinity of the grown layers.…”

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confidence: 99%

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Growth Mechanisms of Silicon Crystallites Grown on Top of a Metal‐Coated Graphite Substrate

Enckevort¹,

Graef²

1981

J. Electrochem. Soc.

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Microscopic in situ observations.and a posteriori surface topography by means of optical and scanning electron microscopy have been carried out in order to study the growth of large-grain polycrystalline silicon films from the gas phase onto a graphite substrate coated with a liquid layer of tin or aluminum. In the present study, only the initial stages of the process, where crystal growth is governed by vapor-liquid-solid mechanisms, are considered. For the growth of the crystallites in the polycrystalline layers, which occur in two morphological forms, viz., needles and platelets, two different mechanisms could be identified: (i) a twin plane reentrant edge (TPRE) mechanism, leading to a fast lengthwise growth of needles and a fast sidewise growth of platelets; and (ii) a nucleation mechanism, accounting for a slow thickness growth of the needles and a slow expansion of the platelike crystals. On the upper surfaces of some needles and platelets a capricious surface pattern (always in conjunction with the occurrence of some solidified metal droplets) could be identified, which could be interpreted in terms of a two-dimensional VLS growth mechanism.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%