Growth Mechanisms of Silicon Crystallites Grown on Top of a Metal‐Coated Graphite Substrate

Enckevort, W.J.P. van; Graef, Michael

doi:10.1149/1.2127358

Cited by 15 publications

(5 citation statements)

References 18 publications

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“…Further, no re-entrant corner was observed at the needle tips, which excludes enhanced growth by the twin plane re-entrant edge (TPRE) mechanism. 24 − 26 Further, neither in situ microscopic nor X-ray evidence was found for recrystallization from an unknown metastable form of NaCl to cubic fcc NaCl. Finally, morphological instability does not fully explain the development of the needles as follows from the fact that the needles often do not show a preferred direction of growth induced by a gradient in supersaturation, but are crisscrossed.…”

Section: Mechanism Of Needle Formationmentioning

confidence: 98%

Additive Induced Formation of Ultrathin Sodium Chloride Needle Crystals

Townsend

Enckevort

Tinnemans

et al. 2018

Crystal Growth & Design

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A multitude of ultrathin crystal needles are formed during the evaporation of saturated aqueous NaCl solution droplets in the presence of amide containing additives. The needles are as small as 300 nm wide and 100–1000 μm in length. Heating experiments, X-ray diffraction, and energy dispersive X-ray spectroscopy showed that the needles are cubic sodium chloride crystals with the needle length direction pointing toward [100]. This shape, not expected for the 43̅m point group symmetry of NaCl, has been explained using a model, based on tip formation by initial morphological instability followed by time dependent adsorption of additive molecules blocking the growth of the needle side faces. The latter also suppresses side branch formation, which normally occurs for dendrite growth.

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Section: Mechanism Of Needle Formationmentioning

confidence: 98%

Additive Induced Formation of Ultrathin Sodium Chloride Needle Crystals

Townsend

Enckevort

Tinnemans

et al. 2018

Crystal Growth & Design

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“…The enhanced growth of the twinned diamond structure is likely explained by the twin plane reentrant edge (TPRE) mechanism. New growth layers are preferentially nucleated at a reentrant corner on the nanowire side facets, which corresponds to a twin plane outcrop. − …”

mentioning

confidence: 99%

Crystal Structure Transfer in Core/Shell Nanowires

et al. 2011

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Structure engineering is an emerging tool to control opto-electronic properties of semiconductors. Recently, control of crystal structure and the formation of a twinning superlattice have been shown for III-V nanowires. This level of control has not been obtained for Si nanowires, the most relevant material for the semiconductor industry. Here, we present an approach, in which a designed twinning superlattice with the zinc blende crystal structure or the wurtzite crystal structure is transferred from a gallium phosphide core wire to an epitaxially grown silicon shell. These materials have a difference in lattice constants of only 0.4%, which allows for structure transfer without introducing extra defects. The twinning superlattices, periodicity, and shell thickness can be tuned with great precision. Arrays of free-standing Si nanotubes are obtained by a selective wet-chemical etch of the core wire.

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“…An aluminum impurity deposited to a thickness of less than 8 A on a silicon surface was detected with a photo I-V technique (241). SEM has been used to study the growth of large-grain polycrystalline silicon films from the gas phase; two different formation mechanisms could be identified: a twin plane reentrant edge mechanism and a nucleation mechanism (940). Films of single crystal cobalt silicide on Si(lll) were analyzed by RBS, TEM, and LEED with the observation that the films are free of grain boundaries (924).…”

Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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He Joined the company in 1959 as a radiochemist. His current work is directed toward developing advanced techniques for semiconductor materials characterization using electron beam (scanning Auger) and in microprobe techniques for chemical imperfections. X-ray topography, and scanning transmission electron microscopy techniques for physical imperfections. Larrabee earned a B.Sc. from the University ol Bishop's College In Quebec and an M.Sc. in chemistry from McMaster University in Ontario, Canada. He has published in analytical, electrochemical, and instrumentation journals and contributed chaplers In books. He has coauthored a book on the characterization of semiconductor materials and coedited a book on the characterization of solid surfaces. Larrabee is a member of the ACS, Electrochemical Society, SAS, and the Dallas Society of Analytical Chemists. R. Allen Bowling received his B.S. In Chemistry from the University ol Alabama and a Ph.D. In Chemistry from ihe University of Tennessee.He held an Alexander von Humboldt postdoctoral research position at the Institute ol Inorganic Chemistry, University of Frankfurt, West Germany, from March 1979 to July 1980. He joined Texas Instruments Incorporated in September 1980 as a process control engineer in a semiconductor processing area. In January 1982, he became a member of the technical staff in the Materials Characterization Branch of the Materials Science Laboratory of Texas Instruments, where he is presently responsible for Auger and XPS instrumentation. Bowling is a member of the Electrochemical Society and the American Vacuum Society.

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Growth Mechanisms of Silicon Crystallites Grown on Top of a Metal‐Coated Graphite Substrate

Cited by 15 publications

References 18 publications

Additive Induced Formation of Ultrathin Sodium Chloride Needle Crystals

Additive Induced Formation of Ultrathin Sodium Chloride Needle Crystals

Crystal Structure Transfer in Core/Shell Nanowires

Forensic science

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