Dynamique de reseau et frequences des modes de vibration pour des impuretes substitutionnelles dans InP, GaP et ZnS

Vandevyver, M.; Plumelle, P.

doi:10.1016/0022-3697(77)90071-3

Cited by 43 publications

(4 citation statements)

References 39 publications

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“…Of considerable practical interest may be a comparison (in Table 4) of presently obtained calorimetric Debye temperatures, $\Theta _D^{{\rm cal}} (0)$ (cf. Tables 1 to 3), with a wealth of earlier estimations for this quantity by different methods, e. g. on the basis of elastic constants 74, $\Theta _D^{{\rm el}} (0)$ , as a by‐product of theoretical calculations of phonon‐density of states (PDOS) spectra 28, 34, 39, 51, 78, 89, $\Theta _D^{{\rm PDOS}} (0)$ , or by numerous earlier calorimetric estimations, $\Theta _D^{{\rm cal}} (0)$ (note that we have quoted in Table 4 also varieties of $\Theta _D (0)$ values for those materials for which reliable calorimetric estimates could not be performed within the present study, owing to the lack of relevant low‐temperature $C_p (T)$ data). Let us briefly comment on the primary cause of relatively pronounced differences between calorimetric estimates due to different studies.…”

Section: Discussionmentioning

confidence: 99%

“…A lot of partial information, in form of figures and/or tables, is available from numerous thermo‐physical studies of heat capacities of III–V and II–VI materials 7, 25, 45–59 with respect to certain middle sections of $\Theta _D (T)$ curves (comprising typically the range from the vicinities of their minima toward room temperature). In contrast, rather scarce is the information available hitherto on $\Theta _D (T)$ dependences for the liquid helium–hydrogen region 22, 23, 32, 33, 60–62.…”

Section: Introductionmentioning

confidence: 99%

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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

Pässler

2009

phys. stat. sol. (b)

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We perform analyses of cryogenic heat capacity data sets, that are available from thermo-physical literature for group-IV materials (diamond, Si, Ge, and 3C-SiC), a variety of III-V materials (BN, BP, BAs, GaN, GaP, GaAs, GaSb, InP, InAs, InSb), and several II-VI materials (ZnO, ZnS, ZnSe, CdS, and CdTe). A prominent new result of the present study consists above all in a general high-precision formula,

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

Pässler

2009

phys. stat. sol. (b)

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“…20, DDR-1020 Berlin, DDR. gap frequencies in the mass defect approxiniation [l] and those including force constant variations [4] reveal that in the case of I n P :Ga a local or gap mode is not possible considering the mass change only, however, a local or gap inode may occur if force constants change in a way that corresponds to a hardening of the nearest-neighbour interaction. Hence, 1nP:Ga is the particular case in which already the occurrence of a local mode gives evidence that force constants have changed.…”

Section: Introductionmentioning

confidence: 99%

Impurity Vibrational Properties of Ga in InP Crystals

Jähne¹,

Kleinert²,

Bairamov

et al. 1981

Physica Status Solidi (b)

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b), a n d V . V . T o~o~o v (b) A theoretical and experimental study is undertaken on the vibrational mode frequencies, infrared and Raman response functions of isolated substitutional Ga impurities in InP. The calculations are based on the existing rigid-ion and defect models for isolated impurities in zincblende lattices. They yield an impurity-induced infrared absorption and Raman scattering in the regions a few cm-1 above the maximum TA, LA, and optical phonon frequencies. Experimentally the infrared reflection and Raman scattering are measured of InP containing 1% Ga impurities. A local mode is observed 4.5 cm-I above the LO(I') frequency of InP. From these experimental data the relative force constant change around the Ga impurity is estimated to Af/f u 0.14. Die Schwingungsfrequenzen, Infrarot-und Raman-Responsefunktionen von InP mit Ga alsSubstitutionsstorstelle werden theoretisch und experimentell untersucht. Die Rechnungen basieren auf dem bereits bekannten Modell starrer Ionen und dem ebenfalls bekannten Defektmodeli fur isolierte Storstellen in Zinkblendegittern. Sie liefern eine storstelleninduzierte Infrarotabsorption und Ramanstreuung in den Bereichen wenige cm-l oberhalb der maximalen TA-, LAund optischen Phononfrequenzen von InP. Experimentell wird die Infrarotreflexion und Ramanstreuung von I n P mit 1% Ga gemessen und dabei eine Lokalmode 4,5 cm-l oberhalb der LO(T)-Frequenz Ton I n P beobachtet. Daraus wird die relative Kraftkonstantenanderung bei der Substitution von Ga zu Aflf = 0,14 abgeschatzt.

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“…The relative differences between the calculated and experimental values amount to approximately 25%, which suggests a strong disturbance of the force constants in the neighbourhood of lithium. From the plot given in [15] we found for Lizn in ZnS the parameter t = 0.35. The positive sign of this parameter indicates that Li produces bond weakening.…”

Section: Resultsmentioning

confidence: 82%

Infrared Studies of Defects in ZnS Crystals Double‐Doped with Li and Al, Ga, and In

Król

Nazarewicz

Gluzinski

et al. 1981

Physica Status Solidi (b)

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Infrared absorption (360 to 500 cm-l) is studied in ZnS crystals doped with both, lithium and a group IIIA dopant. The dominant bands in the obtained absorption spectra can be ascribed to the localized vibrational modes of two types of defects: 1) unassociated Li on a Zn site, Lizn, and 2) pairs comprising substitutional Li on a Zn site and substitutional group IIIA impurity on the nearest Zn site, MZIn-Lizn (&I = Al, Ga, or In). Li in ZnS is found to have a considerable effect on atomic interactions in the neighbouring region and, therefore, cannot be regarded as a pure mass defect.On a 6tudi6 l'absorption infra-rouge (360 to 500 cm-l) dans les cristaux de ZnS contenant comme impuret6s le lithium et en mbme temps un Blknient du groupe IIIA. Les bandes dominantes dans le spectre d'absorption ont 6t6 attribu6es aux modes localisbs des d6fauts de deux sortes: 1) Li isole dans un site de Zn, Lizn, e t 2) paires compos6ks du Li dans un site de Zn e t d'une impurit6 du groupe IIIA dans un autre site de Zn le plus proche du lithium, M&-Li&, (M = Al, Ga ou In). On a constat6 que le lithium dans ZnS perturbe considBrablement les interactions interatomiques dans son voisinage ct pour cela il ne peut pas atre trait6 comme un pur d6faut de masse.

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Dynamique de reseau et frequences des modes de vibration pour des impuretes substitutionnelles dans InP, GaP et ZnS

Cited by 43 publications

References 39 publications

Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

Impurity Vibrational Properties of Ga in InP Crystals

Infrared Studies of Defects in ZnS Crystals Double‐Doped with Li and Al, Ga, and In

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