Dynamics of two-dimensional exciton magnetic polaron in CdTe/(Cd,Mn)Te quantum wells

Yakovlev, D. R.; Ossau, W.; Landwehr, G.; Bicknell-Tassius, R.N.; Waag, A.; Schmeusser, S.; Uraltsev, I. N.; Pohlmann, Adriana Raffin; Göbel, E. O.

doi:10.1016/0022-0248(92)90871-f

Cited by 26 publications

(9 citation statements)

References 12 publications

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“…The dynamics of MP formation has been studied by a picosecond time-resolved spectroscopy [20,23]. The PL signal was recorded by a streak-camera with temporary resolution of 15 ps and Selective photoexcitation was provided by 5 ps laser pulses.…”

Section: Resultsmentioning

confidence: 99%

Magnetic Polaron Formation in Semimagnetic Semiconductor Heterostructures

Yakovlev

1996

Acta Phys. Pol. A

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Section: Resultsmentioning

confidence: 99%

Magnetic Polaron Formation in Semimagnetic Semiconductor Heterostructures

Yakovlev

1996

Acta Phys. Pol. A

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“…For all our data it is close to 20% at 1.5 K, within the experimental uncertainty. This component cannot be attributed to an effect involving the photocreated carriers, such as the formation of an excitonic magnetic polaron, since it has been clearly shown that in QWs with a low Mn content, the formation time of a polaron would be much longer than the exciton lifetime [12]. We would tentatively attribute it to the relaxation stabilized by the interaction with the strongly anisotropic gas of preexisting holes.…”

Section: Mn Concentration X [%]mentioning

confidence: 94%

Magnetization dynamics in (Cd,Mn)Te quantum wells

Goryca

Ferrand

Kossacki

et al. 2006

Physica Status Solidi (b)

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“…In addition, Cd Te is the base material für the related ternary alloys Hg1_xCdrTe and Cd l _ x MnxTe (CdMnTe). Hg1_xCdrTe is an important infrared detector material, and CdMnTe as a dilute magnetic semiconductür exhibits unique features such as, e.g., a giant Faraday rotation and magnetic polaron formation [3,4].…”

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Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

Waag

Heinke

Scholl

et al. 1993

Journal of Crystal Growth

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122

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We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd l ~xMg,Tc by mokcular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cdl_,MgxTe epilayers were grown with a Mg conccntration hetween 0 and 68'1(, wh ich corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7'k. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the ralher good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.

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Dynamics of two-dimensional exciton magnetic polaron in CdTe/(Cd,Mn)Te quantum wells

Cited by 26 publications

References 12 publications

Magnetic Polaron Formation in Semimagnetic Semiconductor Heterostructures

Magnetic Polaron Formation in Semimagnetic Semiconductor Heterostructures

Magnetization dynamics in (Cd,Mn)Te quantum wells

Growth of MgTe and Cd1−xMgxTe thin films by molecular beam epitaxy

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