2006
DOI: 10.1002/pssb.200564605
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Magnetization dynamics in (Cd,Mn)Te quantum wells

Abstract: The relaxation of the magnetization change induced by a short pulse of magnetic field in p-doped (Cd,Mn)Te quantum wells is determined from the giant Zeeman shift of the photoluminescence line. The characteristic times change by three orders of magnitude upon application of a static magnetic field.

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Cited by 15 publications
(15 citation statements)
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“…Carrier-ion exchange interaction has been also exploited in a recent study of Mn spin relaxation in a (Cd,Mn)Te quantum well, performed by photoluminescence measurements under pulsed magnetic field [17]. The magnetic field was created by a micro-coil attached to the sample.…”
Section: Spin Relaxation Of Magnetic Ions In Pulsed Magnetic Fieldsmentioning
confidence: 99%
“…Carrier-ion exchange interaction has been also exploited in a recent study of Mn spin relaxation in a (Cd,Mn)Te quantum well, performed by photoluminescence measurements under pulsed magnetic field [17]. The magnetic field was created by a micro-coil attached to the sample.…”
Section: Spin Relaxation Of Magnetic Ions In Pulsed Magnetic Fieldsmentioning
confidence: 99%
“…As a measure of the magnetization of the QW we used the Zeeman shift of the lumi- (907) nescence line. The temporal profiles of the luminescence during and after the magnetic pulses were recorded at selected wavelengths on the slope of appropriate line [4].…”
Section: Sample and Experimentsmentioning
confidence: 99%
“…by intense optical laser pulses [9,10], on-chip microcoils provide the possibility to electrically control the spin polarization. Due to the low inductivity of such microstructured coils, a frequency range up to the gigahertz (GHz) regime is expected and compared with previous work [7,8], this allows one to study Mn 2þ spin dynamics in a magnetic semiconductor on a sub-nanosecond time scale.…”
mentioning
confidence: 96%
“…direct generation of spin polarized carriers by circularly polarized optical excitation [2], electrical control via spin-orbit coupling [3] as well as spin resonance experiments in spin blockade geometry [4]. The most straightforward way, however, is to use a magnetic field, either defined by nano-/microferromagnets atop the semiconductor [5,6], or generated by current loops [7,8]. The latter approaches offer the possibility to locally control the spin polarization on a micrometer scale or even below.…”
mentioning
confidence: 98%