Dynamics of stacking faults luminescence in GaN/Si nanowires

Korona, K. P.; Reszka, A.; Sobanska, M.; Perkowska, P S; Wysmołek, A.; Kłosek, K.; Żytkiewicz, Z. R.

doi:10.1016/j.jlumin.2014.06.061

Cited by 24 publications

(31 citation statements)

References 26 publications

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“…These energies are marked in figure 13(a) by grey dashed lines, while the NBE emission energies of ZB and WZ GaN at 300 K are marked by dot-dashed lines. In agreement to this expectation, Korona et al [18] have recently followed the luminescence of I 1 BSFs up to room temperature and determined an emission energy of 3.36 eV. Note that two of the peaks in figure 13(a) This discussion highlights the advantage of the spatially resolved spectral measurements: In spot mode CL spectra, the ZB quantum wells are selectively excited enabling their unambiguous identification, whereas the detection is more difficult in spectra integrated over a larger area [66,76] or in maps of monochromatic CL intensities (CL images).…”

Section: Bsf-related Luminescence At Room Temperaturementioning

confidence: 56%

“…Further evidence for an in-plane localization of excitons at I 1 BSFs has been reported by several groups in the form of an S-shaped temperature dependence of the peak energy in the range between 10 and 75 K [6,18,30,76,78]. A redistribution of carriers among localized states leads to an initial redshift, followed by a blueshift due to the thermal depopulation of the localized states before the temperature dependence follows that of the free exciton emission [6,78].…”

Section: Stacking-fault Bundlingmentioning

confidence: 67%

“…Monoexponential fits to the initial decay of the transients in figure 10 give decay times of 0.4 ns at 3.42 eV, 3.2 ns at 3.33 eV and 15 ns at 3.29 eV. For I 1 BSFs, a number of other groups have measured PL or CL transients [18,25,68,[76][77][78][79]. The reported initial decay times vary over an order of magnitude, ranging from 70 ps [77] up to 780 ps [78].…”

Section: Time-resolved Luminescence Spectroscopymentioning

confidence: 91%

“…Only few reports include measurements of the emission related to BSFs at elevated sample temperatures [6,18,28,66,76]. These reports concentrate on the I 1 BSFs and tend to see a quenching of this emission line with increasing temperature.…”

Section: Bsf-related Luminescence At Room Temperaturementioning

confidence: 99%

“…To improve the efficiency of GaN-based devices, various strategies are employed with the aim to reduce the high dislocation densities inherent to the heteroepitaxial growth of GaN and avoiding polarization fields which are detrimental to optical devices [2,3]. However, these growth strategies often result in the formation of stacking faults: Especially the growth of non-and semi-polar GaN layers [4][5][6][7][8] as well as epitaxial-lateral overgrowth [9][10][11][12][13][14] or the coalescence overgrowth of nanowires [15][16][17][18] are associated with the formation of basal-plane stacking faults independent of which growth technique is used. As a consequence, the emission characteristics and transport properties of the layers are changed [11,19].…”

Section: Introductionmentioning

confidence: 99%

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Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

106

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Abstract. Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

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Section: Bsf-related Luminescence At Room Temperaturementioning

confidence: 56%

Section: Stacking-fault Bundlingmentioning

confidence: 67%

Section: Time-resolved Luminescence Spectroscopymentioning

confidence: 91%

Section: Bsf-related Luminescence At Room Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

106

View full text Add to dashboard Cite

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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application

et al. 2020

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Poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In the present work, GaN nanowires with diameters of 25-50 nm and two lengths (200 and 500 nm) have been grown using molecular beam epitaxy technique. Solar-grade monocrystalline silicon wafers were used as substrates for nanowire synthesis. GaN nanostructures were incorporated into P3HT:PCBM photoactive layer in order to facilitate charge transfer between P3HT:PCBM and Si. Samples with and without nanowires were compared. Addition of nanowires led to the improvement in photovoltaic performance. Open circuit voltage has risen by 72% and short circuit current density by 200%. Series resistance has decreased 50 times, and power conversion efficiency has risen 20.7 times. Additional maxima are found in photocurrent spectrum corresponding to carriers being generated near GaN absorption edge. Moreover, external quantum efficiency peaks near GaN absorption edge, indicating the formation of current transfer channel via P3HT/GaN/Si cascade heterojunction. Mechanism explaining source of abovementioned improvement is proposed.

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