2010
DOI: 10.1063/1.3305319
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Dynamics of reactive high-power impulse magnetron sputtering discharge studied by time- and space-resolved optical emission spectroscopy and fast imaging

Abstract: Time- and space-resolved optical emission spectroscopy and fast imaging were used for the investigation of the plasma dynamics of high-power impulse magnetron sputtering discharges. 200 μs pulses with a 50 Hz repetition frequency were applied to a Cr target in Ar, N2, and N2/Ar mixtures and in a pressure range from 0.7 to 2.66 Pa. The power density peaked at 2.2–6 kW cm−2. Evidence of dominating self-sputtering was found for all investigated conditions. Up to four different discharge phases within each pulse w… Show more

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Cited by 76 publications
(64 citation statements)
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“…The left panel (a) shows the flux terms involved in the particle balance for argon atoms (equation (4) density. This is consistent with Langmuir probe measurements in our discharge [5,22], and with optical emissions in another HiPIMS device [23] that demonstrate a significant amount of fast electrons during discharge ignition.…”
Section: Results From Model Runssupporting
confidence: 78%
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“…The left panel (a) shows the flux terms involved in the particle balance for argon atoms (equation (4) density. This is consistent with Langmuir probe measurements in our discharge [5,22], and with optical emissions in another HiPIMS device [23] that demonstrate a significant amount of fast electrons during discharge ignition.…”
Section: Results From Model Runssupporting
confidence: 78%
“…We will therefore use this F PWR and explore the time development during a HiPIMS pulse in section 3.1, and test the sensitivity to the assumption of the extent in the z direction of the IR in section 3.2. [18,21,23] that show rapid changes in this time scale. For times shorter than about 10-15 µs, the IRM assumption of a constant size of the IR is therefore not valid, and we can only make some qualitative observations.…”
Section: Results From Model Runsmentioning
confidence: 99%
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“…Moreover, due to high metal ionization this technique has a better scope for controlling film properties deposited via reactive sputtering. As such HiPIMS has been frequently utilized for the deposition of metal nitrides such as Al-N, [6] Cr-N, [7][8][9] Ti-N, [10] Nb-N, [11] etc. and metal oxide thin films such as TiO 2 , [12,13] Al 2 O 3 , [14,15] ZnO, [16] ZrO 2 , [17] and Fe 2 O 3 .…”
Section: Introductionmentioning
confidence: 99%