1979
DOI: 10.1103/physrevlett.42.112
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Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond Resolution

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Cited by 320 publications
(86 citation statements)
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“…Therefore, the recombination is dominated by the photo-excited electron dynamics in the n-type GaAs. In our previous reports [4,5], it was supposed that the fast decay component is due to the hot electron relaxation in the conduction band because Shank et al reported that the hot carrier distribution approaches to the lattice temperature with a similar time constant of approximately 4 ps [10]. The present experiment shows that the lifetime of the fast decay component was hardly affected by the dopant level, laser power, and sample temperature which change the barrier height of the surface potential and the depth of the band bending region, in other words, the space charge region (SCR).…”
Section: Discussionmentioning
confidence: 98%
“…Therefore, the recombination is dominated by the photo-excited electron dynamics in the n-type GaAs. In our previous reports [4,5], it was supposed that the fast decay component is due to the hot electron relaxation in the conduction band because Shank et al reported that the hot carrier distribution approaches to the lattice temperature with a similar time constant of approximately 4 ps [10]. The present experiment shows that the lifetime of the fast decay component was hardly affected by the dopant level, laser power, and sample temperature which change the barrier height of the surface potential and the depth of the band bending region, in other words, the space charge region (SCR).…”
Section: Discussionmentioning
confidence: 98%
“…These observations were noted to be consistent with a simple mechanism in which photointerconversion ofthe isomers occurs via a common twisted excited singlet state intermediate.11 Other workers have also suggested that the photoisomerizations of BR and other pyrrole pigments are "singlet state" reactions (5,6,23 Fluorescence quantum yields for BR were calculated from the integrated fluorescence spectra in comparison with the spectra from solutions of acridine yellow in ethanol at 22°C, for which a yield of 0.86 was previously determined (24 Picosecond Time-Resolved Spectroscopy. The apparatus used in these experiments, described in detail elsewhere, is based on a continuous-wave-pumped, passively mode-locked picosecond dye laser, producing 0.5-ps pulses at 610 nm (25,26). Mode-locked pulses, dumped from the dye laser cavity at 11 Hz, were amplified to an energy of 0.5-1.0 mj per pulse by using a three-stage dye laser amplifier pumped with the second harmonic of a Q-switched Nd:yttrium-aluminum garnet laser.…”
mentioning
confidence: 99%
“…Much attention has been focused on the nonlinear optical response near the bandgap of semiconductors, both for device application and physical insight. In particular, the large nonlinearity of excitons confined in quantum well structures was extensively studied theoretically and experimentally [4][5][6][7][8]. Quasi-two-dimensional excitons in quantum well structures gave rise to the strong nonlinear response in the vicinity of the bandgap.…”
Section: Introductionmentioning
confidence: 99%