Dynamics of excited interlayer states in hexagonal boron nitride monolayers

Hengsberger, Matthias; Leuenberger, D.; Schuler, Adrian; Roth, Silvan; Muntwiler, Matthias

doi:10.1088/1361-6463/ab70c6

Cited by 7 publications

(4 citation statements)

References 156 publications

(462 reference statements)

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“…We observe a broad peak (onset at ∼3.6 V) featuring several subpeaks whose occurrence and intensity depends on the position in the pore. Notably, the onset of the m = 1 IPS is at higher energies than reported by two-photon photoelectron spectroscopy (2PPE) on h -BN/Cu(111) . We relate this to the m = 1 IPS being Stark shifted a few hundred meV by the electric field in the tunneling junction .…”

Section: Resultsmentioning

confidence: 67%

“…Notably, the onset of the m = 1 IPS is at higher energies than reported by two-photon photoelectron spectroscopy (2PPE) on h-BN/Cu(111). 47 We relate this to the m = 1 IPS being Stark shifted a few hundred meV by the electric field in the tunneling junction. 48 The dI/dV line-scan (Figure 6b) across the QD (wrinkle-pore-wrinkle) displays a U-like shape featuring spatial intensity variations inside the pore, while there are no features in the same energy range on the wrinkles.…”

Section: Growth Of Qd Arrays At the H-bn/cu(111) Interfacementioning

confidence: 98%

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Formation of an Extended Quantum Dot Array Driven and Autoprotected by an Atom-Thick h-BN Layer

et al. 2023

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Engineering quantum phenomena of two-dimensional nearly free electron states has been at the forefront of nanoscience studies ever since the first creation of a quantum corral. Common strategies to fabricate confining nanoarchitectures rely on manipulation or on applying supramolecular chemistry principles. The resulting nanostructures do not protect the engineered electronic states against external influences, hampering the potential for future applications. These restrictions could be overcome by passivating the nanostructures with a chemically inert layer. To this end we report a scalable segregation-based growth approach forming extended quasi-hexagonal nanoporous CuS networks on Cu(111) whose assembly is driven by an autoprotecting h-BN overlayer. We further demonstrate that by this architecture both the Cu(111) surface state and image potential states of the h-BN/CuS heterostructure are confined within the nanopores, effectively forming an extended array of quantum dots. Semiempirical electron-plane-wave-expansion simulations shed light on the scattering potential landscape responsible for the modulation of the electronic properties. The protective properties of the h-BN capping are tested under various conditions, representing an important step toward the realization of robust surface state based electronic devices.

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Section: Resultsmentioning

confidence: 67%

Section: Growth Of Qd Arrays At the H-bn/cu(111) Interfacementioning

confidence: 98%

Formation of an Extended Quantum Dot Array Driven and Autoprotected by an Atom-Thick h-BN Layer

et al. 2023

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“…Hexagonal Boron Nitride (hBN), which is similar to graphite structure, has attracted considerable attention in the past twenty years because of its photoelectric applications. It has been successfully proved to be a promising luminescent material for deep ultraviolet and single photon light sources [1,2]. HBN is a wide bandgap material (~6 eV) and bulk hBN is an indirect bandgap semiconductor with a bandgap of 5.955 eV [3].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Investigation on Liquid-exfoliated Hexagonal Boron Nitride Nano Particles

Wang

2023

J Stud Res

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Although hexagonal boron nitride and graphene in two-dimensional materials have similar structures, there are great differences in their electronic structures. hBN has a huge energy gap (~ 6 eV) and can be regarded as a semiconductor or insulator, while graphene can be used as a conductor because of its zero-energy gap. Because of their high degree of lattice matching, they often overlap each other and are used as conductive layer and insulating layer in the material process of electronic components. In this study, we tried to prepare nano-sized hexagonal boron nitride particles by a relatively simple method "liquid-assisted ball milling and ultrasonic exfoliating" to solve the high-cost problem of the industrialization of hBN. We prepared hBN nanoparticles using zirconium milling balls, water-proof sonication and ultrasonic crusher, then studied the essential changes to their electronic structures and sizes through Atomic Force Microscope and various spectroscopic methods such as PL, PLE, absorption and Raman spectrum. It helps us to find ways to control the electronic structure and energy gap of hBN, which would help the development of advanced semiconductor manufacturing applications and advanced quantum light sources.

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“…Since single-layer graphene was first discovered in 2004, twodimensional (2D) materials have aroused significant attention in various fields because of their specific 2D structures and diverse optoelectronic properties [1]. Since then, a group of 2D materials have been widely synthesized and investigated, including topological insulators [2], black phosphorus (BP) [3,4], hexagonal boron nitride [5,6], transition metal (TM) dichalcogenides (TMDs) [7,8], graphitic carbon nitride (g-C 3 N 4 ) [9], and transition-metal carbides/nitrides (MXene) [10,11]. In particular, materials composed of elements in the VA group (e.g.…”

Section: Introductionmentioning

confidence: 99%

Recent advances in stable arsenic–phosphorus: preparation, properties, and application

Liu¹,

Xue²,

Yu³

et al. 2022

J. Phys. D: Appl. Phys.

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Two-dimensional (2D) arsenic–phosphorus (AsP), as a derivative of black phosphorus (BP), has achieved great progress in regards to preparation methods, property modulation, and front application, which can be attributed to the following two points. The first is that a method has been developed of alloying BP with the congener element arsenic to produce high-quality AsP; the second is that stable AsP possesses unique electronic and optical properties. To conclude the continuous and extensive research, this review focuses on synthesis details, modulation strategies, and application advances of stable AsP. Firstly, several pathways to prepare AsP with different phases are listed. Secondly, multiple solutions to optimize the electronic properties of AsP are discussed, such as strain regulation and composition tuning, and especially composition tuning of AsP including element modification, atomic substitution, and dopant participation, which can bring about adjustments of the lattice structure, bandgaps, and electronic properties. Based on the regulated AsP, applications in infrared photodetectors, high-performance transistors, and efficient-energy storage devices and so on have been widely developed. Although there are challenges ahead, this review may bring new insights into and inspirations for further development of 2D AsP-based materials and devices.

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Dynamics of excited interlayer states in hexagonal boron nitride monolayers

Cited by 7 publications

References 156 publications

Formation of an Extended Quantum Dot Array Driven and Autoprotected by an Atom-Thick h-BN Layer

Formation of an Extended Quantum Dot Array Driven and Autoprotected by an Atom-Thick h-BN Layer

Spectroscopic Investigation on Liquid-exfoliated Hexagonal Boron Nitride Nano Particles

Recent advances in stable arsenic–phosphorus: preparation, properties, and application

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