Diazophosphane HPN2, a heavy analogue of hydrazoic acid (HN3), has been synthesized at low temperature (10 K) through photolytic reactions of molecular nitrogen (N2) with phosphine (PH3) and phosphaketene (HPCO) under irradiations at 193 and 365 nm, respectively. The characterization of HPN2 and its isotopologues DPN2 and HP15N2 by matrix-isolation IR and UV–vis spectroscopy is supported by quantum chemical calculations at the CCSD(T)-F12a/cc-pVTZ-F12 level of theory. Upon irradiation at 266 nm, the P–N bond in HPN2 breaks, whereas its photolysis at 193 nm generates the elusive phosphinyl radical •PN2.
Two-dimensional (2D) arsenic–phosphorus (AsP), as a derivative of black phosphorus (BP), has achieved great progress in regards to preparation methods, property modulation, and front application, which can be attributed to the following two points. The first is that a method has been developed of alloying BP with the congener element arsenic to produce high-quality AsP; the second is that stable AsP possesses unique electronic and optical properties. To conclude the continuous and extensive research, this review focuses on synthesis details, modulation strategies, and application advances of stable AsP. Firstly, several pathways to prepare AsP with different phases are listed. Secondly, multiple solutions to optimize the electronic properties of AsP are discussed, such as strain regulation and composition tuning, and especially composition tuning of AsP including element modification, atomic substitution, and dopant participation, which can bring about adjustments of the lattice structure, bandgaps, and electronic properties. Based on the regulated AsP, applications in infrared photodetectors, high-performance transistors, and efficient-energy storage devices and so on have been widely developed. Although there are challenges ahead, this review may bring new insights into and inspirations for further development of 2D AsP-based materials and devices.
Black arsenic phosphorus (b-As x P 1−x ) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, As x P 1−x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. As x P 1−x at x ≤ 0.25 is capable of broadband absorption, while b-As x P 1−x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-As x P 1−x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-As x P 1−x with high concentration differences is a perfect candidate for photonic material.
The elusive hydrogen-bonded radical complex (•SH•••NH3) consisting of ammonia (NH3) and mercapto radical (•SH) has been generated through the 193 nm laser photolysis of the molecular complex between NH3 and...
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