Dynamics of combined electron beam and laser dispersion of polymers in vacuum

Physico-chemical Modification of the Fibrous Filter Nozzles for Purification Processes of Water and Air

“…Earlier we published a number of papers [12][13][14] about the use of fibers which are produced by the technology [1][2][3] for filtration purification of water from oil products and other pollutants [15][16][17][18] with the methane-butane fraction being separated from natural gas before transportation [19][20][21][22] by the characteristics of the fibers with the surface modified by anti-bactericidal additives.…”

The application of the Methods of Cathodoluminescence and Photoluminescence for Non-destructive Testing of AlGaN Heterostructures

“…Unfortunately, this peak is hard to identify, possibly, it is related to junctions in the forbidden band of the AlN wide-band material. The dependence of the maximum position of the exciton photoluminescence peak for triple compound Al x Ga 1−x N on x (atomic fraction of Al) has been determined by experiment in the work [3,4]. In this case, the cathodoluminescence peak with energy of 3.97 eV has been demonstrated for energy of exciting electrons of 0.5 eV (and for energy of 1 keV) which corresponded to aluminum content of x = 0.24.…”

“…The main purpose of this work is to develop cathodoluminescence methods as implements for non-destructive testing in order to determine aluminum content in heterostructures before their production is started. Methods of cathodoluminescence and photoluminescence are effectively used for examination of properties of wide-band gap materials and structures, in particular, for examination of dislocation nature in GaN thin films and for control of self-radiation related to a band-to-band junction [1][2][3]. Cathodoluminescence and photoluminescence allow detecting the defects related to luminescence in the visible spectrum.…”

“…The relation between the so-called "yellow" cathodoluminescence excited by electrons of various energy and resistance of ohmic contacts of a GaN source and drain of microwave transistors has been ascertained. Aluminum content in AlGaN layers has been examined, in particular, in the work [3], however, thick layers of specified material (hundreds of nanometers thick) have been used. In this work, AlGaN layers with a thickness of 20nm have been examined.…”

Mechanisms of change of superficial properties of polymeric materials in discharge plasma

“…In practice for improvement of physical and chemical properties of materials of the electronic equipment, the creation of the set superficial nanostructures by etching and thermal annealing, the ionbeam and thermal methods of activation and modification of materials are widely used [1][2][3][4][5][6]. At the same time the offered recommendations, technical solutions in this area have empirical character as systematic researches of the nature of the proceeding processes, their influences, for example, on morphology, the adsorptive, electrophysical properties of materials are practically absent.…”