Dynamics of a localized spin excitation close to the spin-helix regime

Salis, G.; Walser, M. P.; Altmann, P.; Reichl, Christian; Wegscheider, Werner

doi:10.1103/physrevb.89.045304

Cited by 44 publications

(42 citation statements)

References 19 publications

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“…Several theoretical studies have identified the cubic Dresselhaus term as the main decay mechanism of the persistent spin helix (Cheng and Wu, 2006;Cheng et al, 2007;Kettemann, 2007;Kurosawa et al, 2015;Liu and Sinova, 2012;Lüffe et al, 2011;Lusakowski et al, 2003;Shen and Wu, 2009;Wenk and Kettemann, 2011), in accordance with experiments already mentioned (Koralek et al, 2009;Salis et al, 2014).…”

Section: Stability Of the Spin Helix: Limiting Factorssupporting

confidence: 74%

“…Effective semiclassical diffusion equations for s( r, t) can be derived via quantum kinetic equations rooted in the Keldysh formalism (Mishchenko et al, 2004). Working in Fourier space at small frequencies and wave vectors, and evaluating the arising parameters within the zero-temperature ground state, one obtains in the regime of weak spin-orbit coupling (Bernevig et al, 2006;Liu and Sinova, 2012;Salis et al, 2014;Stanescu and Galitski, 2007)…”

Section: Spin Diffusion Equationsmentioning

confidence: 99%

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Colloquium: Persistent spin textures in semiconductor nanostructures

2017

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Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered in such a way that persistent spin structures with extraordinarily long spin lifetimes arise even in the presence of disorder and imperfections. We review experimental and theoretical developments on this subject both for n-doped and p-doped structures, and we discuss possible device applications.

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Section: Stability Of the Spin Helix: Limiting Factorssupporting

confidence: 74%

Section: Spin Diffusion Equationsmentioning

confidence: 99%

Colloquium: Persistent spin textures in semiconductor nanostructures

2017

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“…Nevertheless, we can estimate values for α by taking into account the information contained in the measured values of τ . Assuming a Dyakonov Perel spin relaxation mechanism [22,23] In conclusion, we have demonstrated pump-probe based all-optical measurements of SOI in low-band-gap InGaAs QWs. The SOI is found to be of Rashba type with an upper limit for the coefficient α of 2×10 −12 eVm.…”

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confidence: 75%

Characterization of spin-orbit fields in InGaAs quantum wells

Henn

Czornomaz

Salis

2016

Applied Physics Letters

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Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the spatial overlap between pump and probe pulses, a diffusive velocity is imprinted on the measured electron spins and a spin precession in the spin-orbit field is measured. A Rashba symmetry of the SOI is determined. By comparing the spatial precession frequency gradient with the spin decay rate, an upper limit for the Rashba coefficients α of 2×10 −12 eVm is estimated.

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“…If we assume that 2DEG spins, or spins that diffuse over the region illuminated by the pump, are involved in the observed KR signal, the Gaussian spin density profile will initially expand with a speed determined by D s . Because of this expansion, the upper limit of the KR decay constant at early times will be determined by a prefactor 33…”

Section: Discussionmentioning

confidence: 99%

Spin accumulation in photo-induced potential dimples generated in semiconductors

et al. 2020

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Conventional ways of confining charges in semiconductors employ advanced lithographic and crystal-growth techniques. The construction of micro/nano-scale structures is also essential for manipulating spins. However, existing techniques are not always flexible enough to control spins in appropriate positions and timings. Here we report an alternative mechanism, which enables us to design temporal and reconfigurable low-dimensional potentials. The formation of photo-induced potential dimples is deduced from time and spatiallyresolved Kerr rotation measurements performed on a GaAs quantum well. Two-dimensional images of spin distributions reveal that the photo-injected electron spins in a small area illuminated by a pump light survive for a time that is two orders of magnitude longer than typical recombination lifetimes. The Kerr rotation dependence on the pump laser conditions implies that the temporally generated dimple-shaped potential profile induced by remote charges effectively confines the electrons and enhances the spin lifetime determined by fluctuating spin-orbit effective magnetic fields.

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Dynamics of a localized spin excitation close to the spin-helix regime

Cited by 44 publications

References 19 publications

Colloquium: Persistent spin textures in semiconductor nanostructures

Colloquium: Persistent spin textures in semiconductor nanostructures

Characterization of spin-orbit fields in InGaAs quantum wells

Spin accumulation in photo-induced potential dimples generated in semiconductors

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