Dynamically tunable thermal transport in polycrystalline graphene by strain engineering

Zeng, Yuqiang; Lo, Chi-Chun; Zhang, Shengjiao; Chen, Zhihong; Marconnet, Amy

doi:10.1016/j.carbon.2019.11.060

Cited by 23 publications

(15 citation statements)

References 37 publications

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“…The measured results demonstrated that under a 0.12% biaxial tensile strain, the system's thermal conductivity drops approximately by 20% at 350 K, which verifies the previous theoretical literatures prediction (Varshney et al, 2018). Similar phenomenon has also been reported in polycrystalline multilayer graphene based on the microbridge measurement (Zeng et al, 2020c). Additionly, using TDTR method, (Meng et al, 2019) showed that a 9% crossplane compressive strain can cause the 7-fold increase of the cross-plane thermal conductivity of multilayer MoS 2 , which is available for improving MoS 2 -based device performance and stability, as shown in Figure 6.…”

Section: From the Perspective Of Phonon-particle Picturesupporting

confidence: 89%

Thermal Transport in Two-Dimensional Heterostructures

2020

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Heterostructures based on two-dimensional (2D) materials have attracted intense attention in recent decades due to their unusual and tunable physics/chemical properties, which can be converted into promising engineering applications ranging from electronics, photonics, and phononics to energy recovery. A fundamental understanding of thermal transport in 2D heterostructures is crucial importance for developing micro-nano devices based on them. In this review, we summarized the recent advances of thermal transport in 2D heterostructures. Firstly, we introduced diverse theoretical approaches and experimental techniques for thermal transport in low-dimensional materials. Then we briefly reviewed the thermal properties of various 2D single-phase materials beyond graphene such as hexagonal boron nitride (h-BN), phosphorene, transition metal dichalcogenides (TMDs) and borophene, and emphatically discussed various influencing factors including structural defects, mechanical strain, and substrate interactions. Moreover, we highlighted thermal conduction control in tailored nanosystems—2D heterostructures and presented the associated underlying physical mechanisms, especially interface-modulated phonon dynamics. Finally, we outline their significant applications in advanced thermal management and thermoelectrics conversion, and discuss a number of open problems on thermal transport in 2D heterostructures.

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Section: From the Perspective Of Phonon-particle Picturesupporting

confidence: 89%

Thermal Transport in Two-Dimensional Heterostructures

2020

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“…In this case, the direct synthesis of graphene on the Si(100) substrate was successful. The recorded Raman scattering spectra of the samples were typical for graphene ( Figure 2 ) [ 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 ]. Characteristic G and 2D peaks as well as defects related peaks (D peak as well as less intensive D+D″ and D+D′ bands [ 39 , 40 ]) were observed.…”

Section: Resultsmentioning

confidence: 99%

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

et al. 2020

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In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

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“…It is found that the stress-strain curve presents almost linear growth with the biaxial strain increasing from 0% to 10%, showing large linear elasticity, which is similar to other 2D materials, like graphene, MoS 2 and borophene [33,34], whose deformation are mostly produced by bond stretching. We note that in the porous structure of g-C 3 N 4 , the first deformation is mainly implemented from the structural deflection rather than the bond stretching, which can induce better malleability compared with the complete 2D materials like graphene, borophene et al [34,35]. And the maximum stress is about 59.27 N/m at 10% strain.…”

Section: Mechanical Propertiesmentioning

confidence: 88%

Mechanical and electronic properties of graphitic carbon nitride (g-C3N4) under biaxial strain

Deng

et al. 2020

Vacuum

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Using the first-principles density functional theory calculations, we investigate the mechanical and electronic properties of biaxially strained graphitic carbon nitride (g-C 3 N 4 ). The results show highly isotropic mechanical properties and large linear elasticity of g-C 3 N 4 . Moreover, both the Perdew-Burke-Ernzehof (PBE) and Heyd-Scuseria-Ernzerhof (HSE06) band gaps reach the maximum values at 10% strain. The bonding properties are analyzed based on the electronic localization function (ELF). In addition, the photon transition between band gap is weak, suggesting the monolayer g-C 3 N 4 is not suitable for a solar cell material. Enough biaxial strain can induce the spin splitting of g-C 3 N 4 , and it is found that the spin-unrestricted band gap of g-C 3 N 4 can be overestimated. This work provides valuable insights for designing the new elastic electronic and spintronic devices based on two-dimensional g-C 3 N 4 .

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Dynamically tunable thermal transport in polycrystalline graphene by strain engineering

Cited by 23 publications

References 37 publications

Thermal Transport in Two-Dimensional Heterostructures

Thermal Transport in Two-Dimensional Heterostructures

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

Mechanical and electronic properties of graphitic carbon nitride (g-C3N4) under biaxial strain

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