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2012
DOI: 10.1103/physrevlett.108.126802
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Dynamical Coulomb Blockade Observed in Nanosized Electrical Contacts

Abstract: Electrical contacts between nanoengineered systems are expected to constitute the basic building blocks of future nanoscale electronics. However, the accurate characterization and understanding of electrical contacts at the nanoscale is an experimentally challenging task. Here, we employ low-temperature scanning tunneling spectroscopy to investigate the conductance of individual nanocontacts formed between flat Pb islands and their supporting substrates. We observe a suppression of the differential tunnel cond… Show more

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Cited by 48 publications
(56 citation statements)
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References 36 publications
(51 reference statements)
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“…1h agree well with these predictions in the range [-0.3;+0.4]eV. Finally, the experimental V-shaped DOS around E F on the meV scale is typical of correlated metals [30] and can be modelled using dynamical Coulomb blockade [31].…”
supporting
confidence: 79%
“…1h agree well with these predictions in the range [-0.3;+0.4]eV. Finally, the experimental V-shaped DOS around E F on the meV scale is typical of correlated metals [30] and can be modelled using dynamical Coulomb blockade [31].…”
supporting
confidence: 79%
“…As a result it is plausible that, even if the area scaling holds, both contributions might still be similar for grain sizes L ∌ 10nm. This is consistent with the experimental results of 31 for Pb superconducting islands where it was possible to reproduce the expected classical scaling of the capacitance with the area only for relatively large grains. Indeed in a Si(111) substrate the charging energy and the mean level spacing of a L ∌ 7nm grain with C ≈ 40aF can be comparable.…”
Section: Size Dependence Of Classical and "Quantum" Capacitancesupporting
confidence: 91%
“…The crucial quantities that characterize the nonequilibrium transport properties of interest here are the steady-state level populations n 1/2 , the interlevel coherence σ 10,01 , and the electrical current that is flowing through the system S. In the occupation number representation, the population of the electronic levels is given by the diagonal elements of the reduced density matrix…”
Section: E Observables Of Interestmentioning
confidence: 99%
“…[3][4][5] Quantum interference phenomena may be used to control the current flow in three-terminal nanoscale transistors 6,7 and single-molecule junctions. 8 Interaction-driven phenomena such as, for example, static or dynamical Coulomb blockade 1,9,10 or the Kondo effect [11][12][13] also occur. While these phenomena have been studied separately, the interplay between interference phenomena, level quantization, and electron-electron interactions in nanoelectronic devices has been less studied and is an important open problem.…”
Section: Introductionmentioning
confidence: 99%