Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

Alshehri, Bandar; Dogheche, Karim; Belahsene, S.; Ramdane, A.; Patriarche, G.; Decoster, D.; Dogheche, Elhadj

doi:10.1109/jphot.2017.2714168

Cited by 21 publications

(12 citation statements)

References 19 publications

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“…A comparison with simulated and experimental results reported in the literature is made to check the reliability of the model and parameters used in the simulation. The numerical simulation results were in good agreement with the simulated and experimental results . The photodiode exhibits a high reverse breakdown voltage of 38 V, a peak responsivity of 0.2 A W −1 at 0.343 μm wavelength and a cutoff frequency of 400 MHz under an applied reverse bias voltage of 2 V and for a 0.1 μm i‐InGaN layer.…”

Section: Discussionsupporting

confidence: 76%

“…with a responsivity of 0.2 A W −1 obtained at 0.38 μm by using a 0.3 μm‐thick In 0.11 Ga 0.89 N p–i–n photodiode, thus validating the model and parameters used in the numerical simulations. The AC response of the photodiode is simulated with small signal analysis of the illuminated light and applied reverse bias voltage of 2 V. Figure illustrates the frequency response, the photodiode shows a behavior of a low pass filter and the cutoff frequency f c where the response drops by

\sqrt{2}

is equal to 400 MHz which is close to the experimental cutoff frequency for an In 0.1 Ga 0.9 N/GaN p–i–n multiple quantum wells photodiode reported by Elshehri et al…”

Section: Resultssupporting

confidence: 70%

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Design and Simulation of InGaN/GaN p–i–n Photodiodes

Elbar

Alshehri

Tobbeche

et al. 2018

Physica Status Solidi (a)

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InGaN ternary alloys with their band gaps varying from 0.7 to 3.4 eV, are very promising for photodetector devices operating from UV to IR wavelength range. Using Silvaco–Atlas software, an In0.1Ga0.9N/GaN based p–i–n photodiode is designed and the J–V characteristics, the spectral responsivity, the frequency response and the cut‐off frequency as a function of InGaN thickness are studied. The photodiode exhibits a high reverse breakdown voltage of 38 V, a peak responsivity of 0.2 A W−1 at 0.343 μm wavelength and a cutoff frequency of 400 MHz under an applied reverse bias voltage of 2 V and for a 0.1 μm i‐InGaN layer, in good agreement with simulated and experimental results found in literature. It is found that an optimum i‐layer thickness of 1.5 μm for the maximum cutoff frequency of 4 GHz attributed to the predominance of the limitation in capacitance effect on the cutoff frequency at low i‐layer thickness and the transit time on the cuttoff frequency for high i‐layer thickness. For this i‐layer thickness, the highest peak responsivity about 0.244 A W−1 at 0.384 μm wavelength is achieved.

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Section: Discussionsupporting

confidence: 76%

\sqrt{2}

is equal to 400 MHz which is close to the experimental cutoff frequency for an In 0.1 Ga 0.9 N/GaN p–i–n multiple quantum wells photodiode reported by Elshehri et al…”

Section: Resultssupporting

confidence: 70%

Design and Simulation of InGaN/GaN p–i–n Photodiodes

Elbar

Alshehri

Tobbeche

et al. 2018

Physica Status Solidi (a)

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“…In the experiment, the trend of the increased 3-dB frequency bandwidth with decreasing the pixel number of the PD-like LED arrays (i.e., f 3dB = 5.2 MHz and 17.6 MHz for the 4 × 2 and 2 × 2 LED receivers biased at 0 V) is the same as their transient response analysis. The higher modulation bandwidth in the LED arrays with fewer pixels (4 pixels) for light detection could be attributed to a decrease in the resistance-capacitance (RC) delay time as the number of the parallel-connected pixels is reduced [30]. Using the p-i-n InGaN/GaN MQW LED structures for light detection, the fabricated LED arrays indeed exhibit PD-like behaviors in the UV light range.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of Dual Functional InGaN LED Arrays as the Optical Transmitter and Receiver for Optical Wireless Communications

Tsai

Wang²,

Lu³

et al. 2021

IEEE Photonics J.

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The feasibility of using InGaN/GaN multiple-quantum-well light-emitting diode arrays (LED arrays) as photodiodes (PDs) is investigated experimentally in addition to their light emitting function. Two discrete LED arrays are produced from one 4 × 4 LED array with a parallel-connected pixel configuration. Such compact designs are useful for light emission or detection at the transmitting/receiving terminals of optical wireless communication systems. Despite 4 × 2 LED arrays achieving a light output power of 67.4 mW at 250 mA, they exhibit an optical responsivity (detectivity) of 0.183 A/W (1.61 × 1012 cm Hz 1/2 W −1 ) under ultraviolet light illumination (λ = 380 nm) at zero bias. For 4 × 2 LED arrays, the presence of an appreciable ultraviolet light response, together with a high 3-dB bandwidth (~8 MHz) for modulated light detection, allowed us to build a 15 Mbit/s directed optical link with these LEDs functioning as both the optical transmitter and the receiver. Finally, the unitary LED array-based optical link is capable of real-time transmission of digital audio signals (data rate = 6 Mbit/s) at a propagation distance of 100 cm in free space even though some of the constituent pixels are inactive for light detection.

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“…It is the optimal material choice for high speed VLC receiver in various environments. However, the previous III-nitride based PDs studies have focused on the typical characteristics of responsivity and pulse measurements as stand-alone devices using metal-semiconductor-metal (MSM) [18][19][20][21][22][23], p-i-n [24][25][26][27], and multiple quantum-wells (MQW) [28][29][30][31][32] structures. Their performance as optical receiver in VLC links has yet to be investigated.…”

Section: Introductionmentioning

confidence: 99%