Dynamic and optical properties of screw dislocations introduced by plastic deformation of CdS crystals at 77-4.2 K

Asymmetry of the Atomic Core Structure of Dissociated a‐Screw Dislocation in GaN Probed by Polarization Optical Spectroscopy

“…DRL in strain‐free CdS was found to be isotropic in (0001) plane, but polarization anisotropy in that plane appeared only under the application of external strain or in highly strained region near the dislocation rosette . A quick motion of the dislocations at low‐temperature, their rapid go out to the surface, scintillating segments observed in polarized light with the electric‐field vector E under the angle of 45–65° with the C axis are the other properties of DRL in CdS that are not characteristic for DRL in GaN. This evidences about different DRL mechanisms in these two materials.…”

“…Luminescence of screw dislocations was reported not only for GaN but also for II–VI wurtzite‐type semiconductors that are most investigated in CdS . DRL in strain‐free CdS was found to be isotropic in (0001) plane, but polarization anisotropy in that plane appeared only under the application of external strain or in highly strained region near the dislocation rosette .…”

“…Luminescence of screw dislocations was reported not only for GaN but also for II-VI wurtzite-type semiconductors that are most investigated in CdS. [21,22] DRL in strain-free CdS was found to be isotropic in (0001) plane, [23] but polarization anisotropy in that plane appeared only under the application of external strain or in highly strained region near the dislocation rosette. [23] A quick motion of the dislocations at low-temperature, [21] their rapid go out to the surface, [24] scintillating segments observed in polarized light with the electric-field vector E under the angle of 45-65 with the C axis are the other properties of DRL in CdS that are not characteristic for DRL in GaN.…”