Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

Qi, Yundong; Liang, Hongbin; Tang, Ching Wan; Lu, Zhengdong; Lau, Kei May

doi:10.1016/j.jcrysgro.2004.08.097

Cited by 65 publications

(32 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We may choose so that its upper and lower halves contain elements with positive and negative real parts, i.e., forward and backward propagating waves, respectively. By introducing another change of variables, as , (7a) recasts into with the solution (9) It is evident that the current continuity of envelope wave functions across an interface should be imposed on , rather than . Assuming that Bloch phases across interfaces remain unchanged, it is straightforward to write (10) where the boundary condition matrix is [20] (11)…”

Section: Combined and Transfer Matrix Methodsmentioning

confidence: 99%

“…The second scheme is based on exploiting several QWs, each emitting in a different wavelength, and combining the output photoluminescence spectra. Until now, white-light LEDs that simultaneously emit two or three colors, including InGaN-GaN QWs, have been reported [5]- [9]. All of the reported structures, however, suffer from low internal quantum efficiency and low intensity emission of the red wavelength, which is principally due to the lack of an efficient red emitter.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design of a GaN White Light-Emitting Diode Through Envelope Function Analysis

Khoshnegar

Sodagar

Eftekharian

et al. 2010

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Abstract-In this paper, we present an envelope function analysis technique for the design of the emission spectra of a white quantum-well light-emitting diode (QWLED). The nanometric heterostructure that we are dealing with is a multiple QW, consisting of periods of three single QWs with various well thicknesses. With the aid of 6 6 Luttinger Hamiltonian, we employ the combination of two methods, k p perturbation and the transfer matrix method, to acquire the electron and hole wave functions numerically. The envelope function approximation was considered to obtain these wave functions for a special basis set. While adjacent valence sub-bands have been determined approximately, the conduction bands are approximated as parabolic. The effect of Stokes shift has also been taken into account. The dipole moment matrix elements for interband atomic transitions are evaluated via the correlation between the electron and hole envelope functions, for both orthogonal polarizations, thus simplifying the calculation of the photoluminescence intensity. Spatial variations in the hole/electron wave functions have been examined with the introduction of piezoelectric and spontaneous polarization internal fields. We theoretically establish the possibility of a highly efficient InGaN red emitter, resulting in a uniform luminescence in red, green, and blue emissions from a white light emitting diode by adjusting the material composition, internal field, and well thickness.Index Terms-Envelope function analysis, GaN, k p method, optical intensity spectrum, white LED.

show abstract

Section: Combined and Transfer Matrix Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of a GaN White Light-Emitting Diode Through Envelope Function Analysis

Khoshnegar

Sodagar

Eftekharian

et al. 2010

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…For full-color display, particularly for microdisplay, blue, green, and red emissions from a single-chip are desirable. For white-light generation in the application of solid-state lighting, the growth of InGaN/GaN QWs for efficient orange-red emission implies the feasibility of fabricating single-chip all-semiconductor white-light LEDs by stacking different QWs for color mixing [8][9][10][11]. Such a phosphor-free LED will have the advantages of energy saving, higher reliability, and possibly lower cost.…”

Section: Introductionmentioning

confidence: 99%

Transmission electron microscopy study on pre-strained InGaN/GaN quantum wells

Chen

Yao

Lin

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

“…It has magnetized much attention due to its high efficiency, energy saving, miniature size, sturdiness, flexibility, immediate start-up, protracted life-span, and inimitable spectral features [1][2][3][4]. This solid-state lighting source will substitute conventional incandescent and fluorescent lamps for universal lighting in future [5].…”

Section: Introductionmentioning

confidence: 99%